Xing-Yue Wang, Hui Zhang, Zi-Lin Ruan, Zhen-Liang Hao, Xiao-Tian Yang, Jin-Ming Cai, and Jian-Chen Lu*
Fig. 1. (a) Structure model of free silicene; (b) band structure of silicene in free state
[23]; (c), (d) the STM images of different phases of silicene on Ag(111)
[24]; (e) STM image, simulated STM image, theoretical calculation structure of silicene on Ir(111)
[25].
Fig. 2. (a) STM image of germanene on Pt(111); (b) and (c) are the structure and electron localization functions of germanene on Pt(111) surface, respectively; (d) LEED pattern of germanene on Pt(111)
[26]; (e) energy versus hexagonal lattice constant of 2D Ge is calculated for various honeycomb structures; (f) and (g) phonon dispersion curves obtained by force-constant and linear response theory are presented by black and dashed green curves, respectively
[27].
Fig. 3. (a) Top view of both the top and bottom Sn atoms and its STM image; (b) side view of Sn atoms arrangement (layer A is the top layer, layer B is the sub top layer)
[32]; (c) high-resolution STM image of the stanene film; (d) schematic atomic model of the honeycomb stanene; (e) profile along the line in c showing that the adjacent Sn atoms are identical in apparent height; (f) 2D BZs of ultraflat stanene on Cu(111); (g) and (h) ARPES spectra of 0.9 ML stanene on Cu(111) along the
M-
Γ-
K-
M2 (g) and
M-
Γ-
M′-
Γ2 (h) directions
[33].
Fig. 4. (a) and (b) are two-dimensional boron sheets structure figures
[40]; (c) STM topographic image of boron structures on Ag(111), with a substrate temperature of ~570 K during growth; (d) STM image of boron sheets after annealing the surface in
Fig.4(c) to 650 K. The two different phases are labelled “S1” and “S2”; (e) high-resolution STM image of S1 phases; (f) high-resolution STM image of S2 phases; (g) top and side views of the S1 model; (h) top and side views of the S2 model
[41].
Fig. 5. (a) STM image and LEED image of hafnium on Ir(111); (b) atomic resolution STM images of hafnium on Ir(111); (c) the 2D charge density in the Hf plane on Ir(111) substrate
[43].
Fig. 6. (a) High-resolution STM image of single layer phosphorus on Au(111); (b) the line profile along the red line in panel (a)
[47]; (c) top and side views of few-layer phosphorene; (d) DFT-calculated band structure of phosphorene monolayer
[46].
Fig. 7. (a) Schematic of monolayer antimonene formed on PdTe
2 substrate; (b) STM image of large antimonene island on PdTe
2; (c) atomic resolution STM image of monolayer antimonene; (d) XPS results before and after sample exposure to air
[53]; (e) the structural model of buck antimonene monolayer and antimonene nanoisland on Cu(111) substrate; (f) side view of panel (e); (g) large-scale STM image and LEED pattern of the antimonene monolayer on Cu(111); (h) atomic resolution STM image of the first buckled layer and island
[54].
Fig. 8. (a) STM image of bismuthene on SiC (0001); (b) high resolution STM image for occupied states; (c) bismuthene on SiC(0001) structural model; (d) theoretical band structure and ARPES measurementsts
[61].
Fig. 9. (a) Structural model of h-BN nanomaterials; (b) STM image of single layer h-BN on Cu (111); (c) contrast-inverted LEED pattern of a single layer h-BN/Cu (111) recorded at room temperature
[70]; (d) thermal conductivity of polymeric composites using BN particles, nanotubes and nanosheets
[71].
Fig. 10. (a) Large-scale STM image of MoS
2 single-layer islands on the Au(111) surface; (b) STM image of a single MoS
2 island with a hexagon shape crossing a single Au(111) step
[75]; (c) bandgap transition of MoS
2[76] from bulk to monolayer; (d) schematic of monolayer MoS
2 photodetector
[77].
Fig. 11. (a) Structural model of monolayer MoSe
2[80]; (b) DFT optimized monolayer MoSe
2 atomic model on Au(111) surface; (c) atomic resolution STM image of monolayer MoSe
2; (d) theoretical simulated STM image based on the calculated structure in (b); (e) STM image of singlelayer MoSe
2 islands on Au(111) substrate
[83]; (f) height profile of MoSe
2 islands marked by a dashed blue line in (e).
Fig. 12. (a) Schematic of the fabrication of PtSe
2 thin films by a single step of direct selenization of a Pt(111) substrate; (b) LEED pattern of a PtSe
2 film formed on the Pt(111) substrate; (c) large-scale STM image shows the Moiré pattern of PtSe
2 thin film on Pt(111); (d) atomic resolution STM image of single layer PtSe
2[88].
Fig. 13. (a) Schematic of the fabrication process of NiSe
2 thin films; (b) NiSe
2 layer has two configurations of T and H
[92]; large-scale STM image (c) and Moiré pattern (d) of the 2D NiSe
2 film
[93].
Fig. 14. (a) Schematic of the crystal structure of monolayer WSe
2[98]; (b) atomic resolution STM image(75 nm × 75 nm) of WSe
2 film; (c) theoretical band structures of monolayer WSe
2[100]; (d) photoluminescence of WSe
2/Graphene heterostructure
[101]; (e) atomic structure of single layer 1H and 1T
' WSe
2; (f) corresponding 2D Brillouin zones with high symmetry points labeled; (g) ARPES map along
ΓY[102].
Fig. 15. (a) Monolayer VSe
2 formed on HOPG substrate; (b) schematic of the fabrication process; (c) d
I/d
V spectra measured on the VSe
2 island and the substrate; (d), (e) Gaussian-fitting of the two peaks marked in (c), the peak positions are –0.28 V and 0.23 V, respectively
[107]; (f) AFM attractive-force image, atomic resolution STM image, simulated STM image, and structural model of 1D-patterned ML VSe
2 match each other
[108].
Fig. 16. (a) Large area and high quality STM image of single layer CuSe; (b) two kinds of triangle holes with opposite orientation and parallelogram holes at boundary; (c) a high resolution STM image of single triangle hole; (d) and (e) STM image of Fe atoms selective adsorption on CuSe surface
[110].
Fig. 17. (a) High resolution STM image of monolayer CuSe with 1 D moiré pattern; (b) atomic structure model of free monolayer CuSe; (c), (d) band structure of monolayer CuSe
[113].
Fig. 18. (a) STM image of large-scale AgTe monolayer on Ag(111) substrate; (b) LEED pattern of monolayer AgTe on Ag(111); (c) large-scale and (d) atomic resolution STM images of the AgTe on Ag(111) with higher Te coverage, showing the patterned hexagonal structure of AgTe
[116].
Fig. 19. (a) STM image of 2D TiTe
2 layer on Au(111) substrate; (b) simulated STM image, showing both
and
(black parallelogram) superstructures
[120]; (c) STM image of PdSe
2 islands on graphene on SiC(0001)
[122]; (d) STM image (500 nm × 500 nm) of Bi
2Te
3 thin film; (e) structure model of the Bi
2Te
3 topological insulator
[127].
单层二维原子
晶体材料
| 生长衬底 | 表征方法 | 平面构型 | 物理性能和潜在应用 | 文献 | 硅烯 | Ir(111) | STM, LEED | 翘曲 | 自由状态下能隙为1.55 meV; | [24]
| | Ag(111) | STM | 翘曲 | Ag(111)上硅烯载流子迁移率为100 cm2·V–1·s–1;
| [25,128-132]
| | Ag(110) | STM | 翘曲 | [131]
| | Ru(0001) | STM, LEED | 翘曲 | 量子自旋霍尔效应; 场效应晶体管; | [132]
| | ZrB2 | STM, ARUPS | 翘曲 | 谷电子学器件; | [133]
| | Pb(111) | STM | 翘曲 | 铁磁性 | [134]
| 锗烯 | Pt(111) | STM, LEED | 翘曲 | 载流子迁移率高达
6.54 × 105 cm2·V–1·s–1;
| [26]
| | Au(111) | STM, LEED | 翘曲 | 能隙23.9 meV; | [135]
| | Al(111) | STM, LEED, XPD | 翘曲 | 量子自旋霍尔效应; | [136]
| | Ag(111) | STM, LEED, ARPES | 翘曲 | 高温超导体; 自旋极化电输运; | [137]
| | Cu(111) | STM | 平坦 | 负热膨胀系数; 热电材料 | [138]
| 锡烯 | Bi2Te3 | STM, RHEED, ARPES | 翘曲 | 热导率11.6 W·m–1·K–1; 巨磁阻效应;
| [32]
| | Cu(111) | STM, ARPES | 平坦 | 自旋轨道耦合诱导带隙约0.3 eV; | [33]
| | Sb(111) | STM | 翘曲 | 拓扑超导体; 近室温量子霍尔效应 | [139]
| 硼烯 | Ag(111) | STM, XPS | 翘曲 | 超导温度: 10—24 K; 超高储氢能力;
杨氏模量可达398 GPa·nm
| [41,140]
| 铪烯 | Ir(111) | STM, LEED | 平坦 | 强自旋轨道耦合作用; 磁矩为1.46 μB | [43]
| 磷烯 | Au(111) | STM, XPS | 翘曲 | 能隙2.0 eV; 光探测器; 太阳能电池; | [45,47]
| | CuxO
| STM, XPS | 平坦 | 电子迁移率高达1000 cm2·V–1·s–1.
| [141]
| 锑烯 | PdTe2 | STM, LEED, XPS | 翘曲 | 能隙可达2.28 eV; 光电子器件; | [53]
| | Cu(111) | STM, LEED, XPS | 翘曲 | 拓扑绝缘体; 金属氧化物半导体场效应晶体管 | [54]
| 铋烯 | SiC | STM, ARPES | 平坦 | 热电材料, 热电优值高达2.4 | [61]
|
|
Table 1. Summary of growth substrate, characterization methods, configurations, physical properties, and potential appli-cations of monatomic two-dimensional materials grown by MBE.
单层二维原子
晶体材料
| 生长衬底 | 表征方法 | 平面构型 | 物理性能和潜在应用 | 文献 | 六方氮化硼 | Ir(111) | STM, LEED, XPS | 平面蜂窝状结构 | 能隙为6 eV的绝缘体; | [67]
| | Ni(111) | STM, XPD | | 高功率电子学器件; 低摩擦材料; | [68]
| | Rh(111) | STM, LEED | | [69,142]
| | Cu(111) | STM, LEED, AFM | | 场效应晶体管的介电层; 深紫外探测器件; 抗氧化涂层 | [70,143]
| 二硫化钼 | Au(111) | STM, XPS | 2H | 载流子迁移率可达200 cm2·V–1·s–1;
电流开/
关比为1 × 108; 能隙1.8 eV
| [75,144]
| | SrTiO3 | STM, SEM, Raman PL | 2H | [145]
| 二硒化钼 | Au(111) | STM, LEED, ARPES | 2H | 直接带隙约1.5 eV; 激子束缚能0.55 eV, 光电子学器件 | [82,83]
| | 双层石墨烯 | STM, LEED, Raman | 2H | [80]
| 二硒化铂 | Pt(111) | STM, LEED, XPS, ARPES | 1T | 能隙2 eV; 螺旋状自旋结构; 自旋动量锁定; 自旋电子学器件; 气体传感器 | [88]
| | | | [146,147]
| 二硒化镍 | Ni(111) | STM, LEED, XPS | 1T | NiSe2/Li电池可逆放电容量为351.4 mA·h·g–1 | [91,93]
| 二硒化钨 | 石墨烯 | STM, RHEED, ARPES | 2H + 1T' | 双激子态; 谷霍尔效应; 谷赝自旋 | [102]
| 二硒化钒 | HOPG | STM, AFM, XPS | 1T | 室温下二维铁磁性; 超高导电性、电荷密度波 | [107,108]
| 硒化铜 | Cu(111) | STM, LEED, STEM | 平面蜂窝状结构
一维摩尔条纹结构
| 周期孔洞结构用于选择性吸附; | [110]
| | Cu(111) | STM, LEED, ARPES | 节线型狄拉克费米子能带结构; 拓扑非平庸的量子自旋霍尔态 | [113]
| 碲化银 | Ag(111) | STM, LEED | 平面蜂窝状结构 | 节线型狄拉克费米子能带结构; 拓扑非平庸的量子自旋霍尔态 | [116,117]
|
|
Table 2. Summary of growth substrate, characterization methods, configurations, physical properties and potential applications of binary two-dimensional materials grown by MBE.