• Acta Physica Sinica
  • Vol. 69, Issue 11, 118101-1 (2020)
Xing-Yue Wang, Hui Zhang, Zi-Lin Ruan, Zhen-Liang Hao, Xiao-Tian Yang, Jin-Ming Cai, and Jian-Chen Lu*
Author Affiliations
  • Faculty of Materials Science and Engineering, Kunming University of Science and Technology, Kunming 650093, China
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    DOI: 10.7498/aps.69.20200174 Cite this Article
    Xing-Yue Wang, Hui Zhang, Zi-Lin Ruan, Zhen-Liang Hao, Xiao-Tian Yang, Jin-Ming Cai, Jian-Chen Lu. Research progress of monolayer two-dimensional atomic crystal materials grown by molecular beam epitaxy in ultra-high vacuum conditions[J]. Acta Physica Sinica, 2020, 69(11): 118101-1 Copy Citation Text show less
    (a) Structure model of free silicene; (b) band structure of silicene in free state[23]; (c), (d) the STM images of different phases of silicene on Ag(111)[24]; (e) STM image, simulated STM image, theoretical calculation structure of silicene on Ir(111)[25].
    Fig. 1. (a) Structure model of free silicene; (b) band structure of silicene in free state[23]; (c), (d) the STM images of different phases of silicene on Ag(111)[24]; (e) STM image, simulated STM image, theoretical calculation structure of silicene on Ir(111)[25].
    (a) STM image of germanene on Pt(111); (b) and (c) are the structure and electron localization functions of germanene on Pt(111) surface, respectively; (d) LEED pattern of germanene on Pt(111)[26]; (e) energy versus hexagonal lattice constant of 2D Ge is calculated for various honeycomb structures; (f) and (g) phonon dispersion curves obtained by force-constant and linear response theory are presented by black and dashed green curves, respectively[27].
    Fig. 2. (a) STM image of germanene on Pt(111); (b) and (c) are the structure and electron localization functions of germanene on Pt(111) surface, respectively; (d) LEED pattern of germanene on Pt(111)[26]; (e) energy versus hexagonal lattice constant of 2D Ge is calculated for various honeycomb structures; (f) and (g) phonon dispersion curves obtained by force-constant and linear response theory are presented by black and dashed green curves, respectively[27].
    (a) Top view of both the top and bottom Sn atoms and its STM image; (b) side view of Sn atoms arrangement (layer A is the top layer, layer B is the sub top layer)[32]; (c) high-resolution STM image of the stanene film; (d) schematic atomic model of the honeycomb stanene; (e) profile along the line in c showing that the adjacent Sn atoms are identical in apparent height; (f) 2D BZs of ultraflat stanene on Cu(111); (g) and (h) ARPES spectra of 0.9 ML stanene on Cu(111) along the M-Γ-K-M2 (g) and M-Γ-M′-Γ2 (h) directions[33].
    Fig. 3. (a) Top view of both the top and bottom Sn atoms and its STM image; (b) side view of Sn atoms arrangement (layer A is the top layer, layer B is the sub top layer)[32]; (c) high-resolution STM image of the stanene film; (d) schematic atomic model of the honeycomb stanene; (e) profile along the line in c showing that the adjacent Sn atoms are identical in apparent height; (f) 2D BZs of ultraflat stanene on Cu(111); (g) and (h) ARPES spectra of 0.9 ML stanene on Cu(111) along the M-Γ-K-M2 (g) and M-Γ-M′-Γ2 (h) directions[33].
    (a) and (b) are two-dimensional boron sheets structure figures[40]; (c) STM topographic image of boron structures on Ag(111), with a substrate temperature of ~570 K during growth; (d) STM image of boron sheets after annealing the surface in Fig.4(c) to 650 K. The two different phases are labelled “S1” and “S2”; (e) high-resolution STM image of S1 phases; (f) high-resolution STM image of S2 phases; (g) top and side views of the S1 model; (h) top and side views of the S2 model[41].
    Fig. 4. (a) and (b) are two-dimensional boron sheets structure figures[40]; (c) STM topographic image of boron structures on Ag(111), with a substrate temperature of ~570 K during growth; (d) STM image of boron sheets after annealing the surface in Fig.4(c) to 650 K. The two different phases are labelled “S1” and “S2”; (e) high-resolution STM image of S1 phases; (f) high-resolution STM image of S2 phases; (g) top and side views of the S1 model; (h) top and side views of the S2 model[41].
    (a) STM image and LEED image of hafnium on Ir(111); (b) atomic resolution STM images of hafnium on Ir(111); (c) the 2D charge density in the Hf plane on Ir(111) substrate[43].
    Fig. 5. (a) STM image and LEED image of hafnium on Ir(111); (b) atomic resolution STM images of hafnium on Ir(111); (c) the 2D charge density in the Hf plane on Ir(111) substrate[43].
    (a) High-resolution STM image of single layer phosphorus on Au(111); (b) the line profile along the red line in panel (a)[47]; (c) top and side views of few-layer phosphorene; (d) DFT-calculated band structure of phosphorene monolayer[46].
    Fig. 6. (a) High-resolution STM image of single layer phosphorus on Au(111); (b) the line profile along the red line in panel (a)[47]; (c) top and side views of few-layer phosphorene; (d) DFT-calculated band structure of phosphorene monolayer[46].
    (a) Schematic of monolayer antimonene formed on PdTe2 substrate; (b) STM image of large antimonene island on PdTe2; (c) atomic resolution STM image of monolayer antimonene; (d) XPS results before and after sample exposure to air[53]; (e) the structural model of buck antimonene monolayer and antimonene nanoisland on Cu(111) substrate; (f) side view of panel (e); (g) large-scale STM image and LEED pattern of the antimonene monolayer on Cu(111); (h) atomic resolution STM image of the first buckled layer and island[54].
    Fig. 7. (a) Schematic of monolayer antimonene formed on PdTe2 substrate; (b) STM image of large antimonene island on PdTe2; (c) atomic resolution STM image of monolayer antimonene; (d) XPS results before and after sample exposure to air[53]; (e) the structural model of buck antimonene monolayer and antimonene nanoisland on Cu(111) substrate; (f) side view of panel (e); (g) large-scale STM image and LEED pattern of the antimonene monolayer on Cu(111); (h) atomic resolution STM image of the first buckled layer and island[54].
    (a) STM image of bismuthene on SiC (0001); (b) high resolution STM image for occupied states; (c) bismuthene on SiC(0001) structural model; (d) theoretical band structure and ARPES measurementsts[61].
    Fig. 8. (a) STM image of bismuthene on SiC (0001); (b) high resolution STM image for occupied states; (c) bismuthene on SiC(0001) structural model; (d) theoretical band structure and ARPES measurementsts[61].
    (a) Structural model of h-BN nanomaterials; (b) STM image of single layer h-BN on Cu (111); (c) contrast-inverted LEED pattern of a single layer h-BN/Cu (111) recorded at room temperature[70]; (d) thermal conductivity of polymeric composites using BN particles, nanotubes and nanosheets[71].
    Fig. 9. (a) Structural model of h-BN nanomaterials; (b) STM image of single layer h-BN on Cu (111); (c) contrast-inverted LEED pattern of a single layer h-BN/Cu (111) recorded at room temperature[70]; (d) thermal conductivity of polymeric composites using BN particles, nanotubes and nanosheets[71].
    (a) Large-scale STM image of MoS2 single-layer islands on the Au(111) surface; (b) STM image of a single MoS2 island with a hexagon shape crossing a single Au(111) step[75]; (c) bandgap transition of MoS2[76] from bulk to monolayer; (d) schematic of monolayer MoS2 photodetector[77].
    Fig. 10. (a) Large-scale STM image of MoS2 single-layer islands on the Au(111) surface; (b) STM image of a single MoS2 island with a hexagon shape crossing a single Au(111) step[75]; (c) bandgap transition of MoS2[76] from bulk to monolayer; (d) schematic of monolayer MoS2 photodetector[77].
    (a) Structural model of monolayer MoSe2[80]; (b) DFT optimized monolayer MoSe2 atomic model on Au(111) surface; (c) atomic resolution STM image of monolayer MoSe2; (d) theoretical simulated STM image based on the calculated structure in (b); (e) STM image of singlelayer MoSe2 islands on Au(111) substrate[83]; (f) height profile of MoSe2 islands marked by a dashed blue line in (e).
    Fig. 11. (a) Structural model of monolayer MoSe2[80]; (b) DFT optimized monolayer MoSe2 atomic model on Au(111) surface; (c) atomic resolution STM image of monolayer MoSe2; (d) theoretical simulated STM image based on the calculated structure in (b); (e) STM image of singlelayer MoSe2 islands on Au(111) substrate[83]; (f) height profile of MoSe2 islands marked by a dashed blue line in (e).
    (a) Schematic of the fabrication of PtSe2 thin films by a single step of direct selenization of a Pt(111) substrate; (b) LEED pattern of a PtSe2 film formed on the Pt(111) substrate; (c) large-scale STM image shows the Moiré pattern of PtSe2 thin film on Pt(111); (d) atomic resolution STM image of single layer PtSe2[88].
    Fig. 12. (a) Schematic of the fabrication of PtSe2 thin films by a single step of direct selenization of a Pt(111) substrate; (b) LEED pattern of a PtSe2 film formed on the Pt(111) substrate; (c) large-scale STM image shows the Moiré pattern of PtSe2 thin film on Pt(111); (d) atomic resolution STM image of single layer PtSe2[88].
    (a) Schematic of the fabrication process of NiSe2 thin films; (b) NiSe2 layer has two configurations of T and H[92]; large-scale STM image (c) and Moiré pattern (d) of the 2D NiSe2 film[93].
    Fig. 13. (a) Schematic of the fabrication process of NiSe2 thin films; (b) NiSe2 layer has two configurations of T and H[92]; large-scale STM image (c) and Moiré pattern (d) of the 2D NiSe2 film[93].
    (a) Schematic of the crystal structure of monolayer WSe2[98]; (b) atomic resolution STM image(75 nm × 75 nm) of WSe2 film; (c) theoretical band structures of monolayer WSe2[100]; (d) photoluminescence of WSe2/Graphene heterostructure[101]; (e) atomic structure of single layer 1H and 1T' WSe2; (f) corresponding 2D Brillouin zones with high symmetry points labeled; (g) ARPES map along ΓY[102].
    Fig. 14. (a) Schematic of the crystal structure of monolayer WSe2[98]; (b) atomic resolution STM image(75 nm × 75 nm) of WSe2 film; (c) theoretical band structures of monolayer WSe2[100]; (d) photoluminescence of WSe2/Graphene heterostructure[101]; (e) atomic structure of single layer 1H and 1T' WSe2; (f) corresponding 2D Brillouin zones with high symmetry points labeled; (g) ARPES map along ΓY[102].
    (a) Monolayer VSe2 formed on HOPG substrate; (b) schematic of the fabrication process; (c) dI/dV spectra measured on the VSe2 island and the substrate; (d), (e) Gaussian-fitting of the two peaks marked in (c), the peak positions are –0.28 V and 0.23 V, respectively [107]; (f) AFM attractive-force image, atomic resolution STM image, simulated STM image, and structural model of 1D-patterned ML VSe2 match each other[108].
    Fig. 15. (a) Monolayer VSe2 formed on HOPG substrate; (b) schematic of the fabrication process; (c) dI/dV spectra measured on the VSe2 island and the substrate; (d), (e) Gaussian-fitting of the two peaks marked in (c), the peak positions are –0.28 V and 0.23 V, respectively [107]; (f) AFM attractive-force image, atomic resolution STM image, simulated STM image, and structural model of 1D-patterned ML VSe2 match each other[108].
    (a) Large area and high quality STM image of single layer CuSe; (b) two kinds of triangle holes with opposite orientation and parallelogram holes at boundary; (c) a high resolution STM image of single triangle hole; (d) and (e) STM image of Fe atoms selective adsorption on CuSe surface[110].
    Fig. 16. (a) Large area and high quality STM image of single layer CuSe; (b) two kinds of triangle holes with opposite orientation and parallelogram holes at boundary; (c) a high resolution STM image of single triangle hole; (d) and (e) STM image of Fe atoms selective adsorption on CuSe surface[110].
    (a) High resolution STM image of monolayer CuSe with 1 D moiré pattern; (b) atomic structure model of free monolayer CuSe; (c), (d) band structure of monolayer CuSe[113].
    Fig. 17. (a) High resolution STM image of monolayer CuSe with 1 D moiré pattern; (b) atomic structure model of free monolayer CuSe; (c), (d) band structure of monolayer CuSe[113].
    (a) STM image of large-scale AgTe monolayer on Ag(111) substrate; (b) LEED pattern of monolayer AgTe on Ag(111); (c) large-scale and (d) atomic resolution STM images of the AgTe on Ag(111) with higher Te coverage, showing the patterned hexagonal structure of AgTe[116].
    Fig. 18. (a) STM image of large-scale AgTe monolayer on Ag(111) substrate; (b) LEED pattern of monolayer AgTe on Ag(111); (c) large-scale and (d) atomic resolution STM images of the AgTe on Ag(111) with higher Te coverage, showing the patterned hexagonal structure of AgTe[116].
    (a) STM image of 2D TiTe2 layer on Au(111) substrate; (b) simulated STM image, showing both and (black parallelogram) superstructures[120]; (c) STM image of PdSe2 islands on graphene on SiC(0001)[122]; (d) STM image (500 nm × 500 nm) of Bi2Te3 thin film; (e) structure model of the Bi2Te3 topological insulator[127].
    Fig. 19. (a) STM image of 2D TiTe2 layer on Au(111) substrate; (b) simulated STM image, showing both and (black parallelogram) superstructures[120]; (c) STM image of PdSe2 islands on graphene on SiC(0001)[122]; (d) STM image (500 nm × 500 nm) of Bi2Te3 thin film; (e) structure model of the Bi2Te3 topological insulator[127].
    单层二维原子 晶体材料 生长衬底表征方法平面构型物理性能和潜在应用文献
    硅烯Ir(111)STM, LEED翘曲自由状态下能隙为1.55 meV;[24]
    Ag(111)STM翘曲Ag(111)上硅烯载流子迁移率为100 cm2·V–1·s–1; [25,128-132]
    Ag(110)STM翘曲[131]
    Ru(0001)STM, LEED翘曲量子自旋霍尔效应; 场效应晶体管;[132]
    ZrB2STM, ARUPS翘曲谷电子学器件;[133]
    Pb(111)STM翘曲铁磁性[134]
    锗烯Pt(111)STM, LEED翘曲载流子迁移率高达 6.54 × 105 cm2·V–1·s–1; [26]
    Au(111)STM, LEED翘曲能隙23.9 meV;[135]
    Al(111)STM, LEED, XPD翘曲量子自旋霍尔效应;[136]
    Ag(111)STM, LEED, ARPES翘曲高温超导体; 自旋极化电输运;[137]
    Cu(111)STM平坦负热膨胀系数; 热电材料[138]
    锡烯Bi2Te3STM, RHEED, ARPES翘曲热导率11.6 W·m–1·K–1; 巨磁阻效应; [32]
    Cu(111)STM, ARPES平坦自旋轨道耦合诱导带隙约0.3 eV;[33]
    Sb(111)STM翘曲拓扑超导体; 近室温量子霍尔效应[139]
    硼烯Ag(111)STM, XPS翘曲超导温度: 10—24 K; 超高储氢能力; 杨氏模量可达398 GPa·nm [41,140]
    铪烯Ir(111)STM, LEED平坦强自旋轨道耦合作用; 磁矩为1.46 μB[43]
    磷烯Au(111)STM, XPS翘曲能隙2.0 eV; 光探测器; 太阳能电池;[45,47]
    CuxO STM, XPS平坦电子迁移率高达1000 cm2·V–1·s–1. [141]
    锑烯PdTe2STM, LEED, XPS翘曲能隙可达2.28 eV; 光电子器件;[53]
    Cu(111)STM, LEED, XPS翘曲拓扑绝缘体; 金属氧化物半导体场效应晶体管[54]
    铋烯SiCSTM, ARPES平坦热电材料, 热电优值高达2.4[61]
    Table 1. Summary of growth substrate, characterization methods, configurations, physical properties, and potential appli-cations of monatomic two-dimensional materials grown by MBE.
    单层二维原子 晶体材料 生长衬底表征方法平面构型物理性能和潜在应用文献
    六方氮化硼Ir(111)STM, LEED, XPS平面蜂窝状结构能隙为6 eV的绝缘体;[67]
    Ni(111)STM, XPD高功率电子学器件; 低摩擦材料;[68]
    Rh(111)STM, LEED[69,142]
    Cu(111)STM, LEED, AFM场效应晶体管的介电层; 深紫外探测器件; 抗氧化涂层[70,143]
    二硫化钼Au(111)STM, XPS2H载流子迁移率可达200 cm2·V–1·s–1; 电流开/ 关比为1 × 108; 能隙1.8 eV [75,144]
    SrTiO3STM, SEM, Raman PL2H[145]
    二硒化钼Au(111)STM, LEED, ARPES2H直接带隙约1.5 eV; 激子束缚能0.55 eV, 光电子学器件[82,83]
    双层石墨烯STM, LEED, Raman2H[80]
    二硒化铂Pt(111)STM, LEED, XPS, ARPES1T能隙2 eV; 螺旋状自旋结构; 自旋动量锁定; 自旋电子学器件; 气体传感器[88]
    [146,147]
    二硒化镍Ni(111)STM, LEED, XPS1TNiSe2/Li电池可逆放电容量为351.4 mA·h·g–1[91,93]
    二硒化钨石墨烯STM, RHEED, ARPES2H + 1T'双激子态; 谷霍尔效应; 谷赝自旋[102]
    二硒化钒HOPGSTM, AFM, XPS1T室温下二维铁磁性; 超高导电性、电荷密度波[107,108]
    硒化铜Cu(111)STM, LEED, STEM平面蜂窝状结构 一维摩尔条纹结构 周期孔洞结构用于选择性吸附;[110]
    Cu(111)STM, LEED, ARPES节线型狄拉克费米子能带结构; 拓扑非平庸的量子自旋霍尔态[113]
    碲化银Ag(111)STM, LEED平面蜂窝状结构节线型狄拉克费米子能带结构; 拓扑非平庸的量子自旋霍尔态[116,117]
    Table 2. Summary of growth substrate, characterization methods, configurations, physical properties and potential applications of binary two-dimensional materials grown by MBE.
    Xing-Yue Wang, Hui Zhang, Zi-Lin Ruan, Zhen-Liang Hao, Xiao-Tian Yang, Jin-Ming Cai, Jian-Chen Lu. Research progress of monolayer two-dimensional atomic crystal materials grown by molecular beam epitaxy in ultra-high vacuum conditions[J]. Acta Physica Sinica, 2020, 69(11): 118101-1
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