High-power semiconductor laser is commonly used for pump source, but the absorption spectra width of the ion which is pumped by the laser is often small. In order to improve the pumping efficiency of high-power semiconductor laser to solid or fiber laser, the current and thermal drift coefficient of wavelength should be decreased. The influence of grating depth and grating duty cycle with the laser wavelength stabilized effect are analyzed theoretically. The appropriate grating parameter is obtained by experimental verification. And the appropriate laser cavity length is obtained according to the optimized condition. The first broad area distributed-feedback (DFB) laser whose wavelength is well-locked is fabricated interiorly. The broad area DFB laser single emitter with 2.4 mm cavity length, 100 μm stripe width produce coutinuous-wave output power of 400 mW at 15 ℃ heatsink temperature and its wavelength is 954 nm. The current drift of wavelength on this DFB laser is 0.67 nm/A and the thermal drift coefficient of wavelength on this DFB laser is 0.046 nm/K.