Study on the Optical Properties and Erasing Performance of Ge2Sb2Te5 Phase Change Thin Films

[in Chinese]; [in Chinese]; [in Chinese]

[4] Lee K G, Park C M, Yoon D,et al. Experimental results of space layer thickness for blue-wavelength dual-layered disc.Jpn JAppl Phys, 2001, 40 (3B) : 1790～1793

[5] Yanagosawa T, Nomot T, Ohsawa S,et al. Signal simulation of 25 Gbytes read-only optical disk system using a high numerical aperture objective lens. Jpn J Appl Phys ,2001,40(3B) : 1536 ～ 1541

[6] Iso Ichimura, Koichiro Kishima , Kiyoushi Osato, et al.Nera-field phase change optical recording of 1.36 numerical aperture. Jpn J Appl Phys ,2000,39(2B) : 962 ～ 967

[7] Weidenhof V, Friedrich I, Wutting M. Atomic force microscopy study of laser induced phase transitions in Ge2Sb2Te5. J Appl Phys, 1999,86: 5879 ～ 5887

[8] Weidenhof V, Friedrich I, Ziegler S, et al. Laser induced crystallization of amorphous Ge2Sb2Te5 films. J Appl Phys,2001,89:3168～3176

[15] Noboru Yamada, Toshiyuki Matsunaga. Structure of lasercrystallized Ge2Sb2 + xTe5 sputtered thin films for use in optical memory. J Appl Phys, 2000,88(12) :7020 ～ 7028

[16] González-Hermández J, Prokhorov E F, Vorobiev Yu V. et al. Mechanism of the isotermic amorphous-to-crystalline phase transition in Ge:Sb:Te termary alloys. J Vac Sci Technol , 2001 ,A19(4): 1623 ～ 1629

[17] Khulbe P K, Wright E M, Mansuripur M. Crystallization behavior of as-deposited, melt quenched, and primed amorphous states of Ge2Sb2.3Te5 films. J Appl Phys,2000,88(7) :3926 ～ 3933