• Chinese Journal of Lasers
  • Vol. 28, Issue 4, 321 (2001)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Monolithic Integrated Single Ridge Stripe Electroabsorption Modulated DFB Lasers Using Selective Area LP-MOVPE[J]. Chinese Journal of Lasers, 2001, 28(4): 321 Copy Citation Text show less

    Abstract

    The monolithic single ridge stripe electroabsorption modulated DFB laser (EML′s) fabricated by selective area LP-MOVPE is reported. The threshold current of the EML′s is 26 mA; the maximum output power is about 9 mW; the extinction ratio is more than 16 dB; no wavelength shift with modulator bias is observed from the ASE spectrum after the optical feedback being reduced; the capacitance of the modulator part is 1.5 pF. No obvious changes of threshold current, isolation resistance and extinction ratio are observed after the preliminary aging test. The EML′s can be used in the 2.5 Gb/s long haul fiber communication systems.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Monolithic Integrated Single Ridge Stripe Electroabsorption Modulated DFB Lasers Using Selective Area LP-MOVPE[J]. Chinese Journal of Lasers, 2001, 28(4): 321
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