• Chinese Journal of Lasers
  • Vol. 33, Issue suppl, 210 (2006)
[in Chinese]1、2、*, [in Chinese]1, [in Chinese]1, and [in Chinese]1、3
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Measurement of Enhanced Near Field and Resonant Enhancement of Goos-Hnchen Shift[J]. Chinese Journal of Lasers, 2006, 33(suppl): 210 Copy Citation Text show less

    Abstract

    It is predicted that the Goos-Hnchen (GH) shift of both reflected and transmitted light beams in the sketch of thin-film frustrated total reflection can be resonantly enhanced .At same time the evanescent wave field in the medium of lower refractive index is still enhanced. In order to measure enhanced evanescent wave field, sketch of frustrated total reflection is used. The results indicate that the GH shifts of reflected and transmitted wave beams can be modulated by changing incident angle and the thickness of the thin film. When the thickness of the vacuum layer satisfies some condition, the GH shift of transmitted beams are half approximately of the reflected beam.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Measurement of Enhanced Near Field and Resonant Enhancement of Goos-Hnchen Shift[J]. Chinese Journal of Lasers, 2006, 33(suppl): 210
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