• Optoelectronics Letters
  • Vol. 17, Issue 11, 656 (2021)
Yuhan LIN1、2, Ye HUANG1、3, Qianpeng ZHU1、2, Genggeng ZHANG1、3, and Juntao HU1、*
Author Affiliations
  • 1National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei 230009, China
  • 2School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei 230009, China
  • 3School of Instrument Science and Opto-electronics Engineering, Hefei University of Technology, Hefei 230009, China
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    DOI: 10.1007/s11801-021-1028-z Cite this Article
    LIN Yuhan, HUANG Ye, ZHU Qianpeng, ZHANG Genggeng, HU Juntao. Improved performance of CdSe/ZnS quantum dot light-emitting diodes through doping with small molecule CBP[J]. Optoelectronics Letters, 2021, 17(11): 656 Copy Citation Text show less
    References

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    [11] LI J, XU L, WANG T, et al. 50-fold EQE improvement up to 6.27% of solution-processed all-inorganic perovskite CsPbBr3 QLEDs via surface ligand density control[J]. Advanced materials, 2017, 29(5):1603885.1- 1603885.9.

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    LIN Yuhan, HUANG Ye, ZHU Qianpeng, ZHANG Genggeng, HU Juntao. Improved performance of CdSe/ZnS quantum dot light-emitting diodes through doping with small molecule CBP[J]. Optoelectronics Letters, 2021, 17(11): 656
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