The Characteristics of GaAs and InP Photoconductive Semiconductor Switch

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Photonica Sinica >Volume 36 >Issue 3 >Page 405 > Article

Acta Photonica Sinica
Vol. 36, Issue 3, 405 (2007)

The Characteristics of GaAs and InP Photoconductive Semiconductor Switch

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², and [in Chinese]²

Author Affiliations

¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. The Characteristics of GaAs and InP Photoconductive Semiconductor Switch[J]. Acta Photonica Sinica, 2007, 36(3): 405 Copy Citation Text

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References

[1] AUSTON D H.Picosescond optoelectronic switching and gating in silicon[J].Appl Phys Lett,1975,26(3):101-103.

[5] ZHAO Y W,LUO Y L,FUNG S.Influence of Fe doping concentration on some properties of semi insulating InP[J].Chinese Journal of Semiconductor,2002,23(10):1041-1045.

[9] ISLAM N E,SCHAMILOGLU E,FLEDDERMANN C B.Analysis of high voltage operation of gallium arsenide photoconductive switches used in high power applications[J].J Appl Phys,1999,86(5):1754-1758.

[10] ZHAO H M,HADIZAD P,HUR J H,et al.Avalanche injection model for the lock-on effect in Ⅲ-Ⅴ power photoconductive switches[J].J Appl Phys,1993,73(44):1807-1812.

[11] LEE C H.Picosecond optoelectronic devices[M].Orlando:Academic Press,1984:73-116.

CLP Journals

[1] Zhu Shaolan, Zhao Wei, Liu Baiyu, Shi Wei, Yang Yanlong. Cavity Dumped Laser Using Fast GaAs Photoconductive Switch[J]. Chinese Journal of Lasers, 2011, 38(5): 502003

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