In view of the large area of dead zone caused by the surface quenching and the contradiction between the dynamic range and the detection efficiency. By applying the epitaxial resistance quenching technology, the quenching resistance was prepared by using a substrate epitaxial layer of silicon material connected with the Avalanche Photo Diode (APD) unit. The developed Silicon Photomultiplier (SiPM) with the active area of 1×1mm2 is called F5-2 which micro cell size is 7 μm and the density of the micro element is as high as 21 488 cells/mm2. The breakdown voltage is 24.5 V; the leakage current is on 10 pA; the gain is 1.4×105; the dark count rate is about 600 kHz/mm2 and the crosstalk rate is about 10% at room temperature over bias 2.5 V; the dynamic range is about 1.8×104 cells/ mm2 and the Photon Detection Efficiency (PDE) peak value @480 nm is 16%; the recovery time is about 8.5 ns. The device has good characteristics of photon counting on account of the better single photon resolution ability. Moreover it can detect photons at the liquid nitrogen temperature which has a great potential for expanding SiPM applications such as dark matter measurements at very low temperatures.