Temperature field simulation of GaN material during Al2O3/GaN laser lift-off

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Opto-Electronic Engineering >Volume 33 >Issue 3 >Page 101 > Article

Opto-Electronic Engineering
Vol. 33, Issue 3, 101 (2006)

Temperature field simulation of GaN material during Al2O3/GaN laser lift-off

[in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Temperature field simulation of GaN material during Al2O3/GaN laser lift-off[J]. Opto-Electronic Engineering, 2006, 33(3): 101 Copy Citation Text

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[in Chinese], [in Chinese], [in Chinese], [in Chinese]. Temperature field simulation of GaN material during Al2O3/GaN laser lift-off[J]. Opto-Electronic Engineering, 2006, 33(3): 101

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