Erbium-doped TeO2-coated Si3N4 waveguide amplifiers with 5 dB net gain: erratum

Henry C. Frankis; Hamidu M. Mbonde; Dawson B. Bonneville; Chenglin Zhang; Richard Mateman; Arne Leinse; Jonathan D. B. Bradley

doi:10.1364/PRJ.393912

Journals >Photonics Research >Volume 8 >Issue 6 >Page 1022 > Article

Photonics Research
Vol. 8, Issue 6, 1022 (2020)

Erbium-doped TeO₂-coated Si₃N₄ waveguide amplifiers with 5 dB net gain: erratum

Henry C. Frankis^1、*, Hamidu M. Mbonde¹, Dawson B. Bonneville¹, Chenglin Zhang¹, Richard Mateman², Arne Leinse², and Jonathan D. B. Bradley¹

Author Affiliations

¹Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7, Canada

²LioniX International BV, Enschede AL 7500, The Netherlands

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DOI: 10.1364/PRJ.393912 Cite this Article Set citation alerts

Henry C. Frankis, Hamidu M. Mbonde, Dawson B. Bonneville, Chenglin Zhang, Richard Mateman, Arne Leinse, Jonathan D. B. Bradley. Erbium-doped TeO₂-coated Si₃N₄ waveguide amplifiers with 5 dB net gain: erratum[J]. Photonics Research, 2020, 8(6): 1022 Copy Citation Text

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