High power AlGaInP laser diodes with zinc-diffused window mirror structure

Yun Xu; Qing Cao; Xiaopeng Zhu; Guohua Yang; Qiaoqiang Gan; Guofeng Song; Liang Guo; Yuzhang Li; Lianghui Chen

Journals >Chinese Optics Letters >Volume 2 >Issue 11 >Page 11647 > Article

Chinese Optics Letters
Vol. 2, Issue 11, 11647 (2004)

High power AlGaInP laser diodes with zinc-diffused window mirror structure

Yun Xu^1、*, Qing Cao^1、2, Xiaopeng Zhu¹, Guohua Yang¹, Qiaoqiang Gan¹, Guofeng Song¹, Liang Guo^1、2, Yuzhang Li^1、2, and Lianghui Chen¹

Author Affiliations

¹Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

²E-O National Co. Ltd., Huizhou 516023

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Yun Xu, Qing Cao, Xiaopeng Zhu, Guohua Yang, Qiaoqiang Gan, Guofeng Song, Liang Guo, Yuzhang Li, Lianghui Chen. High power AlGaInP laser diodes with zinc-diffused window mirror structure[J]. Chinese Optics Letters, 2004, 2(11): 11647 Copy Citation Text

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CLP Journals

[1] Lin Tao, Duan Yupeng, Zheng Kai, Chong Feng, Ma Xiaoyu. High Power 657 nm Laser Diodes with Nonabsorbing Windows[J]. Chinese Journal of Lasers, 2009, 36(1): 104

[2] Kai Zheng, Tao Lin, Li Jiang, Jun Wang, Suping Liu, Xin Wei, Guangze Zhang, Xiaoyu Ma. High power red-light GaInP/AlGaInP laser diodes with nonabsorbing windows based on Zn diffusion-induced quantum well intermixing[J]. Chinese Optics Letters, 2006, 4(1): 0127

[3] [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. High Power 650 nm Red Semiconductor Laser with Transparent Window[J]. Chinese Journal of Lasers, 2007, 34(9): 1182

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