• Chinese Journal of Lasers
  • Vol. 37, Issue 8, 2139 (2010)
[in Chinese]1、*, [in Chinese]2, [in Chinese]1, [in Chinese]1, [in Chinese]1, and Peter Zeppenfeld2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3788/cjl20103708.2139 Cite this Article Set citation alerts
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], Peter Zeppenfeld. Si Microstructure Fabricated by 355 nm Nanosecond Pulsed Laser and Its Fluorescence Microscopy Study[J]. Chinese Journal of Lasers, 2010, 37(8): 2139 Copy Citation Text show less

    Abstract

    Slots with a width of about 25 μm is fabricated on Si (100) using a homebuilt micromachining system based on a 355 nm nanosecond pulse laser. Strong photoluminescence (PL) emission from the fabricated area is characterized by fluorescence microscopy and local fluorescence spectroscopy. Fluorescence emission in the wavelength range of 400-700 nm is detected with excitation wavelength range of 400-440 nm. Furthermore,a strong decay of the PL intensity is observed as a function of irradiation time. It can be confirmed that the optical property of silicon is changed after nanosecond pulsed laser fabrication. And a potential method to produce optoelectronic device based on silicon is tried with pulsed laser fabrication.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], Peter Zeppenfeld. Si Microstructure Fabricated by 355 nm Nanosecond Pulsed Laser and Its Fluorescence Microscopy Study[J]. Chinese Journal of Lasers, 2010, 37(8): 2139
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