A dynamic photoresponse model for a pinned photodiode in CMOS image sensors

Jinghua AO; Zhiyuan GAO; Jing GAO; Jiangtao XU

doi:10.1007/s11801-022-2012-y

[1] MARCELOT O, GOIFFON V, NALLET F, et al. Pinned photodiode CMOS image sensor TCAD simulation : in-depth analysis of in-pixel pinning voltage measurement for a diagnostic tool[J]. IEEE transactions on electron devices, 2017, 64(2):455-462.

[2] PRIYADARSHINI N, SARKAR M. A 2erms-temporal noise CMOS image sensor with in-pixel 1/f noise reduction and conversion gain modulation for low light imaging[J]. IEEE transactions on circuits and systems I:regular papers, 2021, 68(1):185-195.

[3] RIZZOLO S, GOIFFON V, ESTRIBEAU M, et al. Influence of pixel design on charge transfer performances in CMOS image sensors[J]. IEEE transactions on electron devices, 2018, 65(3):1048-1055.

[4] PELAMATTI A, BELLOIR J-M, MESSIEN C, et al. Temperature dependence and dynamic behavior of full well capacity in pinned photodiode CMOS image sensors[J]. IEEE transactions on electron devices, 2015, 62(4):1200-1207.

[5] ALAIBAKHSH H, KARAMI M A. A general compact pinned photodiode model capable of miniature PPD modeling[J]. IEEE transactions on electron devices, 2021, 68(6):2785-2790.

[6] GAO Z, XU J, ZHOU Y, et al. Analysis and modeling of the light-dependent full well capacity of the 4-T pixel in CMOS image sensors[J]. IEEE sensors journal, 2016, 16(8):2367-2373.

[7] KHAN U, SARKAR M. Dynamic capacitance model of a pinned photodiode in CMOS image sensors[J]. IEEE transactions on electron devices, 2018, 65(7):2892-2898.

[8] ALAIBAKHSH H, KARAMI M A. Analytical modeling of pinning process in pinned photodiodes[J]. IEEE transactions on electron devices, 2018, 65(10):4362-4368.

[9] XIA C, ZHANG Y, LU X, et al. Dynamic model of FWC dependent on the energy-level distribution of interface-state traps in pinned photodiodes[J]. IEEE transactions on electron devices, 2021, 68(4):1682-1687.

[10] AKSHAY K, PILLAI P R, BHUVAN B. Analytical modeling of response time and full well capacity of a pinned photo diode[C]//2018 13th International Conference on Design & Technology of Integrated Systems in Nanoscale Era (DTIS), April 9-12, 2018, Taormina, Italy. New York:IEEE, 2018:17805936.

[11] FORCINA A, CARBONE P. Modelling dark current and hot pixels in imaging sensors[J]. Statistical modelling, 2020, 20(1):30-41.

[12] PELAMATTI A, GOIFFON V, ESTRIBEAU M, et al. Estimation and modeling of the full well capacity in pinned photodiode CMOS image sensors[J]. IEEE electron device letters, 2013, 34(7):900-902.

[13] BOUKHAYMA A. Ultra low noise CMOS image sensors[ R]. Cham, Switzerland:Springer, 2018:15.

[14] CHEN C, BENLAN S, BING Z, et al. An improved model for the full well capacity in pinned photodiode CMOS image sensors[J]. IEEE journal of the electron devices society, 2015, 3(4):306-310.

[15] EN K, LIU B S, ZHU J S, et al. The physics of semicon ductors[M]. 7th ed. Beijing:Publishing House of Electronics Industry, 2008:158-187.

[16] NEAMEN D A. Semiconductor physics and devices basic principles[M]. ZHAO Y Q, YAO S Y, XIE X D, et al, Transl. 3rd ed. Beijing:Publishing House of Electronics Industry, 2010:170-225.