Xue-Bing Zhang, Nai-Zhang Liu, Ruo-He Yao. Polar optical phonon scattering of two-dimensional electron gas in AlGaN/GaN high electron mobility transistor [J]. Acta Physica Sinica, 2020, 69(15): 157303-1
- Acta Physica Sinica
- Vol. 69, Issue 15, 157303-1 (2020)
Fig. 1. Device structure diagram of AlGaN/GaN HEMT.
Fig. 2. A schematic diagram of polarization caused by a longitudinal optical wave.
Fig. 3. Mobility limited by polar optical phonon scattering as a function of temperature.
Fig. 4. Polar optical phonon scattering dependence on temperature for different n 2D.
Fig. 5. Curve of polar optical phonon scattering versus optical phonon energy ћω LO.
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Table 1. Parameters of GaN used for the calculations.
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