High-Saturation Current 14xx nm Strained Quantum Well Lasers

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 32 >Issue 2 >Page 161 > Article

Chinese Journal of Lasers
Vol. 32, Issue 2, 161 (2005)

High-Saturation Current 14xx nm Strained Quantum Well Lasers

[in Chinese]^*, [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]

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[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. High-Saturation Current 14xx nm Strained Quantum Well Lasers[J]. Chinese Journal of Lasers, 2005, 32(2): 161 Copy Citation Text

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Abstract

The research of the 14xx nm strained quantum well (SQW) lasers is reported. The 14xx nm AlGaInAs/AlInAs/InP SQW lasers with tapered gain regions emitting at 1430 nm are fabricated. The SQW epitaxial structure is grown by metal organic chemical vapor deposition (MOCVD) and ridge-type waveguide structure with tapered gain regions is used as laser core. The process of preparing double-channel ridge-type waveguide laser epitaxial structure includes lithographic, etching, metallization (P-side

Keywords

14xx nm pump laser fiber Raman amplifier strained quantum well laser tapered gain region laser technique

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. High-Saturation Current 14xx nm Strained Quantum Well Lasers[J]. Chinese Journal of Lasers, 2005, 32(2): 161

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