Design and Implementation of Multi-functional in situ Monitoring Probe Based on MOCVD

YANG Chao-pu; FANG Wen-qing; LIU Ming-bao; Li Chun; ZHOU Chun-sheng

doi:10.3788/gzxb20174606.0622002

[1] LU Da-cheng, DUAN Shu-kun. Metal organic vapor phase epitaxy base and application［M］. Beijing:Science Press,2009.

[2] YANG Chao-pu, FANG Wen-qing. Influence of atmosphere and pressures on infrared temperature measurement of MOCVD reactor［J］. Journal of Shangluo University, 2015,29(4):43-46.

[3] KROST A, DADGAR A. GaN-based optoelectronics on silicon substrates［J］. Materials science and engineering B, 2002,93(1-3):77-84.

[4] BRUNNER F, KNAUER A, SCHENK T, et al. Quantitative analysis of in situ wafer bowing measurements for III-nitride growth on sapphire ［J］. Journal of Crystal Growth, 2008,310(10):2432-2438.

[5] YANG Chao-pu. Research on MOCVD in situ photoluminescence and on-line infrared thermometry［D］. Nanchang: Nanchang University, 2014.

[6] WANG Chao, ZHANG Ze-zhan, CHEN Lei, et al. In-situ monitoring technology for growth of III nitrides by metal organic chemical vapor deposition［J］. Journal of University of Electronic Science and Technology of China, 2016,45(4):650-658.

[7] LI Wei. Design and implementation of realtime film thickness monitoring system based on MOCVD［D］. Wuhan: Wuhan University of Technology, 2012.

[8] SHI Dong-ping, WU Chao, LI Zi-jun, et al. Analysis of the influence of infrared temperature measurement based on reflected temperature compensation and incidence temperature compensation［J］. Infrared and Laser Engineering, 2015,44(8):2321-2326.

[9] SHI Dong-ping, WU Chao, LI Zi-jun, et al. Optimized tri-wavelength infrared temperature measurement introducing dimensionless model and bending coefficient［J］. Infrared and Laser Engineering, 2016,45(2):1-6.

[10] SHI De-heng, SUN Jin-feng, ZHU Zun-lue, et al. Optimization of a passive single-wavelength real-time temperature measurement system［J］. Acta Photonica Sinica, 2008,37(1):61-66.

[11] TAO Wei, WU Guo-jun, GUAN Yun-tian. Chromatic thermometry used in ceramic sintering process［J］. Journal of Applied Optics, 2012,5(33):940-943.

[12] LI Xiao-feng, LU Qiang, LI Li, et al. Thickness Measurement of Multi-alkali Photocathode［J］. Acta Photonica Sinica, 2012,41(11):1377-1382.

[13] LI Cui-yun, ZHU Hua. Curve analysis of real-time interference in GaN film growth by MOCVD［J］. Jouranl of Wuhan University of Technology, 2013,27(11):18-20.

[14] Hanbook of Optical Constants of Solids［M］, EDWARD D. PALIK. Academic Press, Boston, 1985.

[15] YU G, WANG G, ISHIKAWA H, et al. Optical properties of wurzite structure GaN on sapphire around fundamental absorption edge(0.78-4.77eV) by spectroscopic ellipsometry and the optical transmission method［J］. Applied Letter, 2007,70(24):3209-3211.