Compositionally graded Pb(Zr_x,Ti_1-x)O₃ thin films were prepared on platinum-coated silicon substrates by Sol-Gel method and rapid heat-treatment. The composition depth profile of a typical up-graded film was determined by using a combination of auger electron spectroscopy and Ar ion etching. The results confirm that the processing method produces graded composition change. XRD analysis shows that the graded thin films possess the structure of tetragonal and rhombohedral. The dielectric constant of the graded thin films is higher than that of each thin film unit, but dielectric loss is near to each other. The dielectric constants of up-graded and down-graded thin films are 206 and 219 at 10 kHz, respectively. The hysteresis loops of the graded thin films show fine ferroelectric properties. The remanent polarizations of up-graded and down-graded thin films are 24.3 and 26.8 μC·cm~(-2), respectively. The pyroelectric coefficient of the graded thin films gradually increases with the temperature up, and is higher than that of each thin film unit. The pyroelectric coefficients of up-graded and down-graded thin films are 5. 78 and 4. 61 ×10 ^-8 C·cm^-2 K^-1 at room temperature, respectively.