[1] Reddy M, Peterson J M, Vang T, et al. Molecular Beam Epitaxy Growth of HgCdTe on Large-Area Si and CdZnTe Substrates[J]. Journal of Electronic Materials, 2011, 40(8): 1706-1716.
[2] Herzog A H, Walsh R J. Process for polishing semiconductor materials: US3170273A[P]. 19650223.
[3] Lin Z C, Huang W S, Tsai J S. A study of material removal amount of sapphire wafer in application of chemical mechanical polishing with different polishing pads[J]. Journal of Mechanical Science and Technology, 2012, 26(8): 2353-2364.
[4] Zhu H, Tessaroto L A, Sabia R, et al. Chemical mechanical polishing (CMP) anisotropy in sapphire[J]. Appl Surf Sci, 2004, 236: 120-130.
[5] Lai C L, Lin S H. Electrocoagulation of chemical mechanical polishing (CMP) wastewater from se-miconductor fabrication[J]. Chemical Engineering Journal, 2003, 95: 205-211.