The growth of ZnCdSe/ZnSe quantum well on N-treated Si substrates which were covered with ZnO by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) was made. Prior to the growth, the Si substrates were treated with NH 3-passivate method, and then ZnO layer was deposited by plasma-enhanced chemical vapor deposition (PECVD) on the passivated Si substrates, X-ray measurement indicated that single orientation ZnO (0002) film was obtained. On these ZnO-Si substrates, ZnCdSe/ZnSe quantum wells were cnsequently grown by LP-MOCVD. There were multi-peaks in the Raman resonant spectra (RRS) of ZnCdSe/ZnSe quantum wells with different well width. PL investigations showed that the emission peak of the QW structures located at about 520 nm, at RT. However, the luminescent signals of the ZnCdSe/ZnSe quantum wells grown directly on Si substrates were undetectable. This indicated that using NH3-passivate Si substrates covered with ZnO film is an effective way to improve the quality of ZnCdSe/ZnSe quantum well.