• Acta Photonica Sinica
  • Vol. 33, Issue 5, 567 (2004)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. [J]. Acta Photonica Sinica, 2004, 33(5): 567 Copy Citation Text show less
    References

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    [2] Bruesselbach H W, Sumida D S. Low-heat high-power scaling using InGaAs-diode-pumpedYb: YAG lasers.IEEE J Select Topics Quantum Electron, 1997,3(1):105~116

    [3] Krupke W F.Ytterbium solid-state lasers-the first decade.IEEE J Select TopicsQuantum Electron, 2000,6(6):1287~1297

    [4] Yang P Z, Deng P Z,Xu J,et al. Growth of high-quality single crystal of 30 at% Yb:YAG and its laser performance.J Cryst Growth,2000,216(1-4):328~351

    [6] Reinberg A R, Riseberg L A, Brown R M,et al. GaAs:Si LED pumped Yb-doped YAGlaser.Appl Phy Lett, 1971,19(1):11~13

    [7] Yu Y Q, Wu Z J, Zhang S Y. Concentration effects of Er3+ ion in YAG:Er lasercrystals.J Alloy and Comp, 2000,302(1-2):204~208

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. [J]. Acta Photonica Sinica, 2004, 33(5): 567
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