Single-mode Lasing of Microdisk Lasers with Low Threshold

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 28 >Issue 8 >Page 681 > Article

Chinese Journal of Lasers
Vol. 28, Issue 8, 681 (2001)

Single-mode Lasing of Microdisk Lasers with Low Threshold

[in Chinese]^1、2, [in Chinese]^1、3, [in Chinese]¹, [in Chinese]⁴, and [in Chinese]¹

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¹[in Chinese]

²[in Chinese]

³[in Chinese]

⁴[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Single-mode Lasing of Microdisk Lasers with Low Threshold[J]. Chinese Journal of Lasers, 2001, 28(8): 681 Copy Citation Text

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Abstract

The lasing modes and the spanteneous emission factors of microdisk lasers are simply analysized in this paper. InGaAs/InGaAsP multiple quantum wells (MQWs) microdisk lasers are fabricated by using the methods of active ion etching (RIE) and selective chemical etching. The diameter of the microdisk lasers was 3 μm. InGaAs/InGaAsP MQWs microdisk lasers cooled by liquid nitrogen was optically pumped. The single mode lasing at 1.506 μm wavelength with threshold pump power about 18 μW is obtained.

Keywords

microdisk laser single mode lasing whispering gallery mode multiple quantum well (MQW)

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Single-mode Lasing of Microdisk Lasers with Low Threshold[J]. Chinese Journal of Lasers, 2001, 28(8): 681

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