Sub-micrometer-thick and low-loss Ge20Sb15/sub&gt;Se65rib waveguides for nonlinear optical devices

Jun LI; Fen CHEN; Xiang SHEN; Shi-xun DAI; Tie-feng XU; Qiu-hua NIE

doi:10.1007/s11801-015-4231-y

Journals >Optoelectronics Letters >Volume 11 >Issue 3 >Page 203 > Article

Optoelectronics Letters
Vol. 11, Issue 3, 203 (2015)

Sub-micrometer-thick and low-loss Ge₂₀Sb_{15/sub>Se₆₅rib waveguides for nonlinear optical devices}

Jun LI^*, Fen CHEN, Xiang SHEN, Shi-xun DAI, Tie-feng XU, and Qiu-hua NIE

Author Affiliations

Laboratory of Infrared Material and Devices, Faculty of Information Science and Engineering, Advanced Technology Research Institute, Ningbo University, Ningbo 315211, China

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DOI: 10.1007/s11801-015-4231-y Cite this Article

LI Jun, CHEN Fen, SHEN Xiang, DAI Shi-xun, XU Tie-feng, NIE Qiu-hua. Sub-micrometer-thick and low-loss Ge₂₀Sb_{15/sub>Se₆₅rib waveguides for nonlinear optical devices[J]. Optoelectronics Letters, 2015, 11(3): 203}Copy Citation Text

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Abstract

We report the fabrication and optical properties of sub-micrometer-thick Ge₂₀Sb_{15/sub>Se₆₅chalcogenide rib waveguides. The radio-frequency (RF) magnetron sputtering method is used to deposit 0.83 μm-thick films. A protective layer of SU-8 is employed to prevent the attack of the alkaline developer, and CHF₃is used as the etching plasma for reactive ion etching (RIE). Finally, the resulted rib waveguides with smooth sidewalls and vertical pattern profiles are rendered. The propagation losses for 4 μm-wide waveguides are measured to be 0.7 dB/cm for transverse electric (TE) modes and 0.68 dB/cm for transverse magnetic (TM) modes at 1 550 nm via the cutback method.}

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