Ateyyah M Al-Baradi1、†, Fatimah A Altowairqi1, A A Atta1、2, Ali Badawi1, Saud A Algarni1, Abdulraheem S A Almalki3, A M Hassanien4, A Alodhayb5, A M Kamal6, and M M El-Nahass2
Author Affiliations
1Department of Physics, Faculty of Science, Taif University, Taif 2974, Saudi Arabia2Department of Physics, Faculty of Education, Ain Shams University, Roxy 11757, Cairo, Egypt3Department of Chemistry, Faculty of Science, Taif University, Taif, Saudi Arabia4Department of Physics, College of Science and Humanities – Al Quwaiiyah, Shaqra University, Saudi Arabia5Research Chair for Tribology, Surface, and Interface Sciences, Department of Physics and Astronomy, College of Science, King Saud University, Riyadh 1141, Saudi Arabia6Department of Physics and Astronomy, College of Science, King Saud University, Riyadh 11451, Saudi Arabiashow less
DOI: 10.1088/1674-1056/ab90e6
Cite this Article
Ateyyah M Al-Baradi, Fatimah A Altowairqi, A A Atta, Ali Badawi, Saud A Algarni, Abdulraheem S A Almalki, A M Hassanien, A Alodhayb, A M Kamal, M M El-Nahass. Structural and optical characteristic features of RF sputtered CdS/ZnO thin films[J]. Chinese Physics B, 2020, 29(8):
Copy Citation Text
show less
Fig. 1. FTIR spectra of as-deposited and thermally annealed CdS/ZnO thin films.
Fig. 2. Observed XRD patterns of as-deposited and thermally annealed CdS/ZnO thin films.
Fig. 3. FESEM micrographs of as-deposited and thermally annealed CdS/ZnO thin films as a function of temperatures: (a) as-deposited film, (b) annealed film at 373 K, (c) annealed film at 473 K, and (d) annealed film at 573 K.
Fig. 4. The absorbance spectra of as-deposited and thermally annealed CdS/ZnO thin films.
Fig. 5. Transmittance and reflectance spectra of asdeposited and thermally annealed CdS/ZnO thin films.
Fig. 6. Spectral dependence of absorption coefficient of as-deposited and thermally annealed CdS/ZnO thin films with inset showing energy dependence of ln(α) for as-deposited and thermally annealed CdS/ZnO.
Fig. 7. Plots of (αhν)1/2versus hν for as-deposited and thermally annealed CdS/ZnO thin films.
Fig. 8. Room-temperature PL spectra of as-deposited and thermally annealed CdS/ZnO thin films excited at 300 nm.
Fig. 9. De-convoluted analysis of annealed CdS/ZnO thin film at 573 K.
Fig. 10. Spectral dependence of mean real part of refractive index, n, of as-deposited and thermally annealed CdS/ZnO thin films.
Fig. 11. Plots of (n2 − 1)−1versus (hν)2 for as-deposited and thermally annealed of CdS/ZnO thin films.
Fig. 12. Plots of n2versusλ2 for as-deposited and thermally annealed of CdS/ZnO thin films.
Fig. 13. Spectral behaviors of third-order nonlinear susceptibility, χ(3) for as-deposited and thermally annealed of CdS/ZnO thin films.
Fig. 14. Spectral behaviors of nonlinear refractive index n2 for as-deposited and thermally annealed of CdS/ZnO thin films.
Material of the target | CdS/ZnO (2:3 mol%) Applied Science Crop. |
---|
Sputtering gas | Ar (99.99%) | Substrate | quartz at room temperature (2 cm × 2 cm) | Substrate temperature/K | 300 | Target substrate distance and angle | 10 cm with an angle 65° | RF Sputtering power/W | 150 | Pure Ar flow rate (standard cubic centimeter per minute) | 30 cm3/min | Sputtering pressure (Pchamber)/mbar | 2.6 × 10−2 | Substrate rotation/rpm | 10 | Target size | 3-inch diameter × 5-mm thickness | Deposition time/h | 6 | Thin film thickness/nm | 515 | Deposition rate/(nm/min) | 1.43 | Annealing temperature (air and atmospheric pressure)/K | 373, 473, 573 |
|
Table 1. Experimental parameters of sputtering-deposited CdS/ZnO thin films.
Optical parameters | /eV | Eu/meV | Eo/eV | Ed/eV | ε∞ | εL | (N/m*)/1047 g−1⋅ cm−3 |
---|
As-deposited | 2.60 | 192 | 4.095 | 20.177 | 5.926 | 6.08 | 2.326 | 373 K | 2.60 | 183 | 3.951 | 18.21 | 5.608 | 5.79 | 2.43 | 473 K | 2.63 | 150 | 3.767 | 15.895 | 5.2194 | 5.19 | 1.753 | 573 K | 2.50 | 179 | 4.434 | 15.237 | 4.436 | 4.38 | 0.956 |
|
Table 2. Optical parameters of transparent CdS/ZnO thin films.