• Chinese Journal of Lasers
  • Vol. 31, Issue 10, 1153 (2004)
[in Chinese]*, [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Laser-Diode Pumped Passively Q-Switched Nd∶GdVO4 Laser[J]. Chinese Journal of Lasers, 2004, 31(10): 1153 Copy Citation Text show less
    References

    [4] J. H. Liu, Z. S. Shao, X.. L. Meng et al.. High-power CW Nd∶GdVO4 solid-state laser end-pumped by a diode-laser-array [J]. Opt. Commun., 1999, 164:199~202

    [5] H. J. Zhang, J. H. Liu, J. Y. Wang et al.. Characterization of the laser crystal Nd∶GdVO4 [J]. J. Opt. Soc. Am. B, 2002, 19(1):18~27

    [7] J. H. Liu, Z. S. Shao, H. J. Zhang et al.. Diode-laser-array end-pumped intracavity frequency-doubled 3.6 W CW Nd∶GdVO4/KTP green laser [J]. Opt. Commun., 2000, 173:311~314

    [8] J. H. Liu, C. L. Du, Z. P. Wang et al.. Diode-pumped Q-switched Nd∶GdVO4 green laser formed with a flat-flat resonator[J]. Optics & Laser Technol., 2001, 33:177~180

    [10] T. T. Kajava, A. L. Gaeta. Q-switching of a diode-pumped Nd∶YAG laser with GaAs [J]. Opt. Lett., 1996, 21(16):1244~1246

    [12] Li Ping, Wang Qingpu, Li Shichen et al.. Multi-watt Q-switched Nd∶YVO4 laser with GaAs output coupler [J]. Chin. Opt. Lett., 2003, 1(1):31~33

    [13] M. O. Manasreh, W. C. Mitchel, D. W. Fischer. Observation of the second energy level of the EL2 defect in GaAs by the infrared absorption technique [J]. Appl. Phys. Lett., 1989, 55(9):864~866

    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Laser-Diode Pumped Passively Q-Switched Nd∶GdVO4 Laser[J]. Chinese Journal of Lasers, 2004, 31(10): 1153
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