Tianjiang HE, Suping LIU, Wei LI, Nan LIN, Cong XIONG, Xiaoyu MA. Study on Quantum Well Intermixing Induced by Zn Impurities in GaInP/AlGaInP Red Semiconductor Lasers[J]. Acta Photonica Sinica, 2024, 53(1): 0114001
- Acta Photonica Sinica
- Vol. 53, Issue 1, 0114001 (2024)
Fig. 1. Schematic diagram of Zn diffusion mechanism in GaAs
Fig. 2. Diffusion of Zn in GaAs under the condition of 680 ℃ and 30 min
Fig. 3. Diffusion of Zn in InP under the condition of 680 ℃ and 30 min
Fig. 4. Thermal stress generated during annealing of epitaxial wafers with ZnO dielectric layer
Fig. 5. Thermal stress generated during annealing of epitaxial wafers with ZnO/SiO2 and ZnO/Si3N4 dielectric layers
Fig. 6. Thermal stress values generated during annealing of epitaxial wafers with ZnO，ZnO/SiO2，and ZnO/Si3N4 dielectric layers
Fig. 7. Schematic diagram of semiconductor laser device structure with epitaxial structure information and photoluminescence spectrum of the original epitaxial wafer
Fig. 8. Schematic diagram of Zn diffusion for the fabrication of non-absorbing window
Fig. 9. Blue shift at various temperatures in ZnO-covered and ZnO-uncovered regions
Fig. 10. PL spectrum of sample under annealing conditions of 650 ℃ and 30 min
Fig. 11. PL spectrums of sample after different temperature treatments
Fig. 12. Diagram of dielectric film cracking caused by excessive stress
Fig. 13. Peak wavelengths of sample 3 after different temperature treatments
Fig. 14. PL spectrums of sample 3 after 1~3 cycles of annealing at 620 ℃ in 30 min
Fig. 15. EDS maps of annealed sample 1 and sample 3
Fig. 16. Composition concentration of quantum well after Al diffusion at different distances
Fig. 17. Simulation results of the material gain spectral peaks with the changes of Al composition
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Table 1. The defect formation energy when Zn replaces each atom in AlGaAs and GaInP materials
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Table 2. The peaks of PL spectrums and amount of blue shift under long-term annealing conditions
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