Ion-assisted bombardment is an effective method to improve a-C film. a-C films were deposited on Si (100) by pulse laser (532 nm, 3. 5×108 W/cm2) ablating graphite target with Ar+ bombarding growing films simultaneously. Scanning electrical microscope and Raman spectra were applied to analysis film structure. As a result, lower working pressure and higher RF power is helpful to prepare a-C film, meanwhile, laser repetition has evident influence on film s growth.