Field-effect transistors are the key component of modern electronic technology, which can control the on/off states of circuit by varying voltages. With the emergence of more new semiconductor materials, the selection of channel materials for field-effect transistors is much more diversified. In recent years, perovskite materials, as a new type of organic-inorganic hybrid semiconductor material, has developed rapidly in the fields of photovoltaic devices and light-emitting diodes, but their development in field-effect transistors have been restricted due to the serious intrinsic ion migration. Ion migration in perovskite materials can lead to partial shielding of grid electric field, which greatly affects the modulation of grid and reduces the field-effect mobility. Here, we systematic elaborate the mechanism of ion migration, and then summarize several methods that can inhibit the ion migration. Finally, the development of perovskite transistors is also prospected.