• Optoelectronics Letters
  • Vol. 13, Issue 4, 271 (2017)
Jun-tao HU1、*, Sheng HU1、2, Kang-li YE1、2, Qing-qing WEI1、2, Kai XU1, and Xiang-hua WANG1
Author Affiliations
  • 1Key Lab of Special Display Technology, Ministry of Education, National Engineering Lab of Special Display Technology,State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei 230009, China
  • 2School of Instrument Science and Opto-Electronics Engineering, Hefei University of Technology, Hefei 230009,China
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    DOI: 10.1007/s11801-017-7055-0 Cite this Article
    HU Jun-tao, HU Sheng, YE Kang-li, WEI Qing-qing, XU Kai, WANG Xiang-hua. Improving operation lifetime of OLED by using thermally activated delayed fluorescence as host[J]. Optoelectronics Letters, 2017, 13(4): 271 Copy Citation Text show less

    Abstract

    We fabricated organic light-emitting diodes (OLEDs) with the thermally activated delayed fluorescence (TADF) material of 4CzIPN, which show better stability compared with the 4,4’-Bis(carbazol-9-yl)biphenyl (CBP) based devices. The half lifetime of the device using 4CzIPN as host material has doubled, and a slower voltage rise compared with that of CBP-based devices has been achieved, which indicates the improvement of stability. We attribute the better stability to the good film morphology and difficult crystallization property of 4CzIPN. Our results suggest that employing the 4CzIPN as host material can be a promising way of fabricating OLEDs with longer operation lifetime.
    HU Jun-tao, HU Sheng, YE Kang-li, WEI Qing-qing, XU Kai, WANG Xiang-hua. Improving operation lifetime of OLED by using thermally activated delayed fluorescence as host[J]. Optoelectronics Letters, 2017, 13(4): 271
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