• Frontiers of Optoelectronics
  • Vol. 8, Issue 3, 282 (2015)
Taotao DING1, Yu TIAN2, Jiangnan DAI1, and Changqing CHEN1、*
Author Affiliations
  • 1Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
  • 2School of Physics and Information Engineering, Jianghan University, Wuhan 430056, China
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    DOI: 10.1007/s12200-015-0529-4 Cite this Article
    Taotao DING, Yu TIAN, Jiangnan DAI, Changqing CHEN. Building one-dimensional Bi2S3 nanorods as enhanced photoresponding materials for photodetectors[J]. Frontiers of Optoelectronics, 2015, 8(3): 282 Copy Citation Text show less

    Abstract

    In this paper, Bi2S3 nanorods were successfully synthesized via a facile one-pot hydrothermal method and characterized by X-ray diffraction, field emission scanning electron microscopy, transmission electron microscopy and X-ray photoelectron spectroscopy. Then the Bi2S3 nanorods were deposited on Au interdigital electrodes by dip-coating to fabricate photodetectors. The photoresponse properties using Bi2S3 nanorods as a representative system showed a significantly enhanced conductivity and the current-voltage (I-V) characteristic exhibited about ca. 2 orders of magnitude larger than the dark current. The response and decay time was estimated to be ~371.66 and 386 ms, respectively, indicating Bi2S3 may be an excellent candidate for high speed and high-sensitivity photoelectrical switches and light sensitive devices.
    Taotao DING, Yu TIAN, Jiangnan DAI, Changqing CHEN. Building one-dimensional Bi2S3 nanorods as enhanced photoresponding materials for photodetectors[J]. Frontiers of Optoelectronics, 2015, 8(3): 282
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