• Photonics Research
  • Vol. 7, Issue 6, B32 (2019)
Jin Wang1、2, Meixin Feng1、3、4、5, Rui Zhou1、4, Qian Sun1、3、4、6, Jianxun Liu1, Yingnan Huang1、3、4, Yu Zhou1、3、4, Hongwei Gao1、3, Xinhe Zheng2, Masao Ikeda1, and Hui Yang1、4
Author Affiliations
  • 1Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • 2University of Science and Technology Beijing, Beijing 100083, China
  • 3Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Nanchang 330200, China
  • 4School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China
  • 5e-mail: mxfeng2011@sinano.ac.cn
  • 6e-mail: qsun2011@sinano.ac.cn
  • show less
    DOI: 10.1364/PRJ.7.000B32 Cite this Article Set citation alerts
    Jin Wang, Meixin Feng, Rui Zhou, Qian Sun, Jianxun Liu, Yingnan Huang, Yu Zhou, Hongwei Gao, Xinhe Zheng, Masao Ikeda, Hui Yang. GaN-based ultraviolet microdisk laser diode grown on Si[J]. Photonics Research, 2019, 7(6): B32 Copy Citation Text show less
    References

    [1] H. Yoshida, Y. Yamashita, M. Kuwabara, H. Kan. A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode. Nat. Photonics, 2, 551-554(2008).

    [2] M. Kneissl, D. W. Treat, M. Teepe, N. Miyashita, N. M. Johnson. Continuous-wave operation of ultraviolet InGaN-InAlGaN multiple-quantum-well laser diodes. Appl. Phys. Lett., 82, 2386-2388(2003).

    [3] D. B. Li, K. Jiang, X. J. Sun, C. L. Guo. AlGaN photonics: recent advances in materials and ultraviolet devices. Adv. Opt. Photon., 10, 43-110(2018).

    [4] D. G. Zhao, J. Yang, Z. S. Liu, P. Chen, J. J. Zhu, D. S. Jiang, Y. S. Shi, H. Wang, L. H. Duan, L. Q. Zhang, H. Yang. Fabrication of room temperature continuous-wave operation GaN-based ultraviolet laser diodes. J. Semicond., 38, 051001(2017).

    [5] W.-S. Won, L. G. Tran, W.-T. Park, K.-K. Kim, C. S. Shin, N. Kim, Y.-J. Kim, Y.-J. Yoon. UV-LEDs for the disinfection and bio-sensing applications. Int. J. Precis. Eng. Manuf., 19, 1901-1915(2018).

    [6] X. B. Sun, Z. Y. Zhang, A. Chaaban, T. K. Ng, C. Shen, R. Chen, J. C. Yan, H. D. Sun, X. H. Li, J. X. Wang, J. M. Li, M.-S. Alouini, B. S. Ooi. 71-Mbit/s ultraviolet-B LED communication link based on 8-QAM-OFDM modulation. Opt. Express, 25, 23267-23274(2017).

    [7] Z. Y. Xu, B. M. Sadler. Ultraviolet communications potential and state-of-the-art. IEEE Commun. Mag., 46, 67-73(2008).

    [8] K. J. Vahala. Optical microcavities. Nature, 424, 839-846(2003).

    [9] A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, E. L. Hu. Room-temperature continuous-wave lasing in GaN/InGaN microdisks. Nat. Photonics, 1, 61-64(2007).

    [10] P. Miao, Z. F. Zhang, J. B. Sun, W. Walasik, S. Longhi, N. M. Litchinitser, L. Feng. Orbital angular momentum microlaser. Science, 353, 464-467(2016).

    [11] J. Sellés, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis, M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont, T. Guillet. III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet. Appl. Phys. Lett., 109, 231101(2016).

    [12] C.-C. Chen, M. H. Shih, Y.-C. Yang, H.-C. Kuo. Ultraviolet GaN-based microdisk laser with AlN/AlGaN distributed Bragg reflector. Appl. Phys. Lett., 96, 151115(2010).

    [13] G. Y. Zhu, J. P. Li, J. T. Li, J. Y. Guo, J. Dai, C. X. Xu, Y. J. Wang. Single-mode ultraviolet whispering gallery mode lasing from a floating GaN microdisk. Opt. Lett., 43, 647-650(2018).

    [14] M. X. Feng, J. Wang, R. Zhou, Q. Sun, H. W. Gao, Y. Zhou, J. X. Liu, Y. N. Huang, S. M. Zhang, M. Ikeda, H. B. Wang, Y. T. Zhang, Y. J. Wang, H. Yang. On-chip integration of GaN-based laser, modulator, and photodetector grown on Si. IEEE J. Sel. Top. Quantum Electron., 24, 8200305(2018).

    [15] M. X. Feng, Z. C. Li, J. Wang, R. Zhou, Q. Sun, X. J. Sun, D. B. Li, H. W. Gao, Y. Zhou, S. M. Zhang, D. Y. Li, L. Q. Zhang, J. P. Liu, H. B. Wang, M. Ikeda, X. H. Zheng, H. Yang. Room-temperature electrically injected AlGaN-based near-ultraviolet laser grown on Si. ACS Photon., 5, 699-704(2018).

    [16] Y. Sun, K. Zhou, Q. Sun, J. P. Liu, M. X. Feng, Z. C. Li, Y. Zhou, L. Q. Zhang, D. Y. Li, S. M. Zhang, M. Ikeda, S. Liu, H. Yang. Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si. Nat. Photonics, 10, 595-599(2016).

    [17] Y. Sun, K. Zhou, M. X. Feng, Z. C. Li, Y. Zhou, Q. Sun, J. P. Liu, L. Q. Zhang, D. Y. Li, X. J. Sun, D. B. Li, S. M. Zhang, M. Ikeda, H. Yang. Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si. Light: Sci. Appl., 7, 13(2018).

    [18] M. Athanasiou, R. Smith, B. Liu, T. Wang. Room temperature continuous-wave green lasing from an InGaN microdisk on silicon. Sci. Rep., 4, 7250(2014).

    [19] H. W. Choi, K. N. Hui, P. T. Lai, P. Chen, X. H. Zhang, S. Tripathy, J. H. Teng, S. J. Chua. Lasing in GaN microdisks pivoted on Si. Appl. Phys. Lett., 89, 211101(2006).

    [20] X. Liu, W. Fang, Y. Huang, X. H. Wu, S. T. Ho, H. Cao, R. P. H. Chang. Optically pumped ultraviolet microdisk laser on a silicon substrate. Appl. Phys. Lett., 84, 2488-2490(2004).

    [21] J. Sellés, V. Crepel, I. Roland, M. El Kurdi, X. Checoury, P. Boucaud, M. Mexis, M. Leroux, B. Damilano, S. Rennesson, F. Semond, B. Gayral, C. Brimont, T. Guillet. III-Nitride-on-silicon microdisk lasers from the blue to the deep ultra-violet. Appl. Phys. Lett., 109, 231101(2016).

    [22] M. X. Feng, J. L. He, Q. Sun, H. W. Gao, Z. C. Li, Y. Zhou, J. P. Liu, S. M. Zhang, D. Y. Li, L. Q. Zhang, X. J. Sun, D. B. Li, H. B. Wang, M. Ikeda, R. X. Wang, H. Yang. Room-temperature electrically pumped InGaN-based microdisk laser grown on Si. Opt. Express, 26, 5043-5051(2018).

    [23] Q. Sun, W. Yan, M. X. Feng, Z. C. Li, B. Feng, H. M. Zhao, H. Yang. GaN-on-Si blue/white LEDs: epitaxy, chip, and package. J. Semicond., 37, 044006(2016).

    [24] B. Leung, J. Han, S. Qian. Strain relaxation and dislocation reduction in AlGaN step-graded buffer for crack-free GaN on Si (111). Phys. Status Solidi, 11, 437-441(2014).

    [25] D. B. Li. GaN-on-Si laser diode: open up a new era of Si-based optical interconnections. Sci. Bull., 61, 1723-1725(2016).

    [26] D. M. Zhao, D. G. Zhao. Analysis of the growth of GaN epitaxy on silicon. J. Semicond., 39, 033006(2018).

    [27] J. L. He, M. X. Feng, Y. Z. Zhong, J. Wang, R. Zhou, H. W. Gao, Y. Zhou, Q. Sun, J. X. Liu, Y. N. Huang, S. M. Zhang, H. B. Wang, M. Ikeda, H. Yang. On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si. Sci. Rep., 8, 7922(2018).

    CLP Journals

    [1] Xiaohang Li, Russell D. Dupuis, Tim Wernicke. Semiconductor UV photonics: feature introduction[J]. Photonics Research, 2019, 7(12): SUVP1

    Jin Wang, Meixin Feng, Rui Zhou, Qian Sun, Jianxun Liu, Yingnan Huang, Yu Zhou, Hongwei Gao, Xinhe Zheng, Masao Ikeda, Hui Yang. GaN-based ultraviolet microdisk laser diode grown on Si[J]. Photonics Research, 2019, 7(6): B32
    Download Citation