[1] YUAN Z J. Precision and Ultra-precision Machining Technology［M］. Beijing: Mechanical engineering press,2007. (in Chinese)

[2] MARINESCU I D,UHLMANN E,DOI T. Handbook of Lapping and Polishing［M］. CRC Press, 2006.

[3] ZHOU L B,SHIMIZU J,SHINOHARA K,et al..Three-dimensional kinematical analyses for surface grinding of large scale substrate［J］.Precision Engineering,2003,27(2):175-184.

[4] HU G X. Polishing mechanism and process optimization durning dual-polishing silicon wafer［D］. Master dissertation, Zhejiang University of Technology,2006. (in Chinese)

[5] WANG Y Z,LIU S L,PENG G L,et al.. Effects of surface treatment on sapphire substrates［J］.Journal of Crystal Growth,2005,174:241-245.

[6] NIU X H,LIU Y L,TAN B M,et al..Method of surface treatment on sapphire substrate［J］. Transactions Nonferrous Metal Society of China,2006,16:732-734.

[7] LU C D. Study on free damage mechanism of precision lapping sapphire wafer for high lighting light-emitting diode［D］.Hangzhou:Zhejiang University of Technology,2007. (in Chinese)

[8] WANG J,LIU Y L, TAN B M,et al.. Fine Polishing of Sapphire Substrates［J］. Microelectronics, 2006,36(1):46-48. (in Chinese)

[9] SAITOW T,HIRAYAMA T,YAMAMOTO T,et al..Lattice strain and dislocations in polished surfaces on sapphire［J］.Journal of American Ceramic Society,2005,88(8):2277-2285.

[10] ZHU H L,TESSAROTO L A,SABIA R. Chemical mechanical polishing (CMP) anisotropy in sapphire［J］. Applied Surface Science,2004,236:120-130.

[11] ZHU H L,NIESZ D E,GREENHUT V A.The effect of abrasive hardness on the chemical-assisted polishing of (0001) plane sapphire［J］.Journal of Materials Research,2005,20(2):504-520.