HfO2 films were prepared by electron beam evaporation on BK7 glass and fused silica substrates. The residual stress was measured by viewing the substrate deflection using ZYGO interferometer. The results show that the residual stresses of HfO2 films on both substrates are tensile and increase with the increase of deposition temperature firstly, then decrease. The main origin mechanisms of residual stress are different. For films on BK7 glass substrate, the intrinsic stress is the determinate factor. While for films on fused silica substrate, the evolution of the residual stress is mainly due to the thermal stress in lower temperature. The microstructure of the HfO2 films was inspected by X-ray diffraction (XRD). It is found that the microstructure of the films transmitted from amorphous to polycrystalline, which is corresponding to the variation of the residual stress. The differences of the film residual stress for two substrates may be due to the evolution of the microstructure as the increasing of the deposition temperature and differences of properties between two kinds substrates.