Preparation of Aluminum Nitride Films Using Pulsed Laser Deposition

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 28 >Issue 3 >Page 272 > Article

Chinese Journal of Lasers
Vol. 28, Issue 3, 272 (2001)

Preparation of Aluminum Nitride Films Using Pulsed Laser Deposition

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Preparation of Aluminum Nitride Films Using Pulsed Laser Deposition[J]. Chinese Journal of Lasers, 2001, 28(3): 272 Copy Citation Text

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Abstract

This paper describes thepreparation of AlN films using pulsed laser deposition. Smooth and highly transparent AlNfilms were deposited on Si (100) substrates. The gap of the films was determined to be 5.7eV. The effects of substrate temperature and annealing temperature were also examined.

Keywords

aluminum nitride laser ablation pulsed laser deposition

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