Highly responsive broadband black phosphorus photodetectors

Yan Liu; Tian Sun; Weiliang Ma; Wenzhi Yu; Shivananju B. Nanjunda; Shaojuan Li; Qiaoliang Bao

doi:10.3788/COL201816.020002

Journals >Chinese Optics Letters >Volume 16 >Issue 2 >Page 020002 > Article

Chinese Optics Letters
Vol. 16, Issue 2, 020002 (2018)

Highly responsive broadband black phosphorus photodetectors

Yan Liu¹, Tian Sun¹, Weiliang Ma¹, Wenzhi Yu¹, Shivananju B. Nanjunda¹, Shaojuan Li¹, and Qiaoliang Bao^1、2、*

Author Affiliations

¹Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215123, China

²Department of Materials Science and Engineering, Monash University, Clayton 3800, Australia

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DOI: 10.3788/COL201816.020002 Cite this Article Set citation alerts

Yan Liu, Tian Sun, Weiliang Ma, Wenzhi Yu, Shivananju B. Nanjunda, Shaojuan Li, Qiaoliang Bao. Highly responsive broadband black phosphorus photodetectors[J]. Chinese Optics Letters, 2018, 16(2): 020002 Copy Citation Text

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(a) Schematic illustration of the BP photodetector. (b) SEM image of the BP photodetector with Au electrodes. (c) AFM image of BP nanoflakes showing a thickness of ∼20 nm. (d) Representative Raman spectrum of BP.

Fig. 1. (a) Schematic illustration of the BP photodetector. (b) SEM image of the BP photodetector with Au electrodes. (c) AFM image of BP nanoflakes showing a thickness of ∼20 nm. (d) Representative Raman spectrum of BP.

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(Color online) (a) Power-dependent photocurrent as a function of source-drain voltage (VSD) at 635 nm. (b) Energy diagram illustrating the photocurrent generation with and without bias. (c) Gate-tunable source-drain current (ISD) with and without light illumination. Laser wavelength: 635 nm, VSD=0.1 V. (d) Time-dependent photocurrent at 635 nm with a light power of 400 nW. VSD=0.1 V. (e) Rise time (10% to 90%) and fall time (90% to 10%) of BP photodetector device at 635 nm. (f) Photocurrent and responsivity as functions of the incident light power at 635 nm.

Fig. 2. (Color online) (a) Power-dependent photocurrent as a function of source-drain voltage (VSD) at 635 nm. (b) Energy diagram illustrating the photocurrent generation with and without bias. (c) Gate-tunable source-drain current (ISD) with and without light illumination. Laser wavelength: 635 nm, VSD=0.1 V. (d) Time-dependent photocurrent at 635 nm with a light power of 400 nW. VSD=0.1 V. (e) Rise time (10% to 90%) and fall time (90% to 10%) of BP photodetector device at 635 nm. (f) Photocurrent and responsivity as functions of the incident light power at 635 nm.

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Fig. 3. (Color online) (a) Power-dependent source-drain current (ISD) as a function of the source-drain bias (VSD) at 980 nm. Inset is a zoom in of the ISD–VSD curve. (b) Time-dependent photocurrent under different incident light powers at 980 nm. VSD=0.1 V. (c) Photocurrent and responsivity as functions of the incident light power at 980 nm. (d) Time-dependent photocurrent with varying incident light powers at 1550 nm. VSD=1 V. (e) Rise time (10% to 90%) and fall time (90% to 10%) of our device at 1550 nm. (f) Photocurrent and responsivity as functions of the incident light power at 1550 nm.

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Material	$V_{SD}$ (V)	$V_{G}$ (V)	Thickness (nm)	Spectral range (nm)	Response time (ms)	Responsivity $({A·W}^{- 1})$	References
BP	1	0	20	1550	4.8	$2.3 \times 10^{2}$	This work
BP	0.2	0	8	640	1	$4.8 \times 10^{- 3}$	[15]
BP	$- 1$	$- 15$	8	900	–	$1 \times 10^{3}$	[18]
BP	$- 0.2$	0	120	1550	–	$5 \times 10^{- 3}$	[22]
BP	$- 0.4$	$- 8$	11.5	1550	$f_{3 dB} = 2.8 GHz$	$1.35 \times 10^{- 3}$	[24]
$BP / {MoS}_{2}$	3	60	22/12	1550	$1.5 \times 10^{- 2}$	$1.53 \times 10^{- 1}$	[25]
InP	7	0	$> 1000$	1550	–	$7.5 \times 10^{- 1}$	[23]