[1] LIU C, FU J, HOU Y, et al. An effective method for evaluating thermal parameters of diode-based thermal sensors[J]. Measurement, 2020, 156: 107621.

[6] Hanaoka M, Kosasayama Y, Hata H, et al. 80×32 SOI diode-based uncooled IRFPAs for thermal detectors[C]//Infrared Technology and Applications XLVII, 2021, 11741: 1174112.

[7] Ishikawa T, Ueno M, Nakaki Y, et al. Performance of 320×240 uncooled IRFPA with SOI diode detectors[C]//Infrared Technology and Applications XXVI, 2000, 4130: 152-159.

[8] Fujisawa D, Maegawa T, Ohta Y, et al. Two-million-pixel SOI diode uncooled IRFPA with 15μm pixel pitch[C]//Infrared Technology and Applications XXXVIII, 2012, 8353: 83531G.

[9] Fujisawa D, Hanaoka M, Kosasayama Y, et al. Development of new pixel structure for beyond 12-μm pixel pitch SOI diode uncooled IRFPAs[C]//Infrared Technology and Applications XLVI. International Society for Optics and Photonics, 2020, 11407: 114071A.

[10] SHEUM L, SUN T P, Shie M C. Measurement of Dark Current of Infrared Detector in Focal Plane Array[C]//Proceedings of 12th VLSI Design/CAD Symposium, 2001: B3-8.

[12] Takamuro D, Maegawa T, Sugino T, et al. Development of new SOI diode structure for beyond 17 μm pixel pitch SOI diode uncooled IRFPAs[C]//Infrared Technology and Applications XXXVII, 2011, 8012: 80121E.

[17] Ueno M, Kosasayama Y, Sugino T, et al. 640×480 pixel uncooled infrared FPA with SOI diode detectors[C]//Infrared Technology and Applications XXXI. International Society for Optics and Photonics, 2005, 5783: 566-577.