Researching | High-Quality Epitaxial N Doped Graphene on SiC with Tunable Interfacial Interactions via Electron/Ion Bridges for Stable Lithium-Ion Storage

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Nano-Micro Letters
Vol. 15, Issue 1, 202 (2023)

High-Quality Epitaxial N Doped Graphene on SiC with Tunable Interfacial Interactions via Electron/Ion Bridges for Stable Lithium-Ion Storage

Changlong Sun¹, Xin Xu¹, Cenlin Gui¹, Fuzhou Chen¹..., Yian Wang², Shengzhou Chen¹, Minhua Shao^2,* and Jiahai Wang^1,**|Show fewer author(s)

Author Affiliations

¹School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, People’s Republic of China

²Department of Chemical and Biological Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon Hong Kong, People’s Republic of China

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DOI: 10.1007/s40820-023-01175-6 Cite this Article

Changlong Sun, Xin Xu, Cenlin Gui, Fuzhou Chen, Yian Wang, Shengzhou Chen, Minhua Shao, Jiahai Wang. High-Quality Epitaxial N Doped Graphene on SiC with Tunable Interfacial Interactions via Electron/Ion Bridges for Stable Lithium-Ion Storage[J]. Nano-Micro Letters, 2023, 15(1): 202 Copy Citation Text

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Changlong Sun, Xin Xu, Cenlin Gui, Fuzhou Chen, Yian Wang, Shengzhou Chen, Minhua Shao, Jiahai Wang. High-Quality Epitaxial N Doped Graphene on SiC with Tunable Interfacial Interactions via Electron/Ion Bridges for Stable Lithium-Ion Storage[J]. Nano-Micro Letters, 2023, 15(1): 202

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