[1] Ozden I, Makarona E, Nurmikko A V, Takeuchi T, Krames M. A dual-wavelength indium gallium nitride quantum well light emitting diode. Applied Physics Letters, 2001, 79(16): 2532-2534
[2] Li Y-L, Gessmann Th, Schubert E F, Sheu J K. Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths. Journal of Applied Physics, 2003, 94(4): 2167-2172
[3] Yamada M, Narukawa Y, Mukai T. Phosphor free highluminous-efficiency white light-emitting diodes composed of InGaN multi-quantum well. Japanese Journal of Applied Physics, 2002, 41: L246-L248
[4] Damilano B, Grandjean N, Pernot C, Massies J. Monolithic white light emitting diodes based on InGaN/GaN multiple-quantum wells. Japanese Journal of Applied Physics, 2001, 40: L918-L920
[5] Xiao D, Kim K W, Bedair S M, Zavada J M. Design of white lightemitting diodes using InGaN/AlInGaN quantum-well structures. Applied Physics Letters, 2004, 84(5): 672-674
[6] Ho I-H, Stringfellow G B. Solid phase immiscibility in GaInN. Applied Physics Letters, 1996, 69(18): 2701-2703
[7] Huang C-F, Tang T-Y, Huang J-J, Shiao W-Y, Yang C C, Hsu C-W, Chen L C. Prestrained effect on the emission properties of InGaN/GaN quantum-well structures. Applied Physics Letters, 2006, 89(5): 051913
[8] Li S F, Schrmann J, Pawlis A, As D J, Lischka K. Cubic InGaN/GaN multi-quantum wells and AlGaN/GaN distributed Bragg reflectors for application in resonant cavity LEDs. Microelectronics Journal, 2005, 36(11): 963-968
[9] Kuo Y-K, Chang Y-A. Effects of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance. IEEE Journal of Quantum Electronics, 2004, 40(5): 437-444