• Frontiers of Optoelectronics
  • Vol. 2, Issue 4, 446 (2009)
Feng WEN, Lirong HUANG*, Liangzhu TONG, Dexiu HUANG, and Deming LIU
Author Affiliations
  • Wuhan National Laboratory for Optoelectronics, College of Optoelectronic Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
  • show less
    DOI: 10.1007/s12200-009-0070-4 Cite this Article
    Feng WEN, Lirong HUANG, Liangzhu TONG, Dexiu HUANG, Deming LIU. Luminescence properties of blue and green dual wavelength InGaN/GaN multi-quantum well light-emitting diode[J]. Frontiers of Optoelectronics, 2009, 2(4): 446 Copy Citation Text show less
    References

    [1] Ozden I, Makarona E, Nurmikko A V, Takeuchi T, Krames M. A dual-wavelength indium gallium nitride quantum well light emitting diode. Applied Physics Letters, 2001, 79(16): 2532-2534

    [2] Li Y-L, Gessmann Th, Schubert E F, Sheu J K. Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths. Journal of Applied Physics, 2003, 94(4): 2167-2172

    [3] Yamada M, Narukawa Y, Mukai T. Phosphor free highluminous-efficiency white light-emitting diodes composed of InGaN multi-quantum well. Japanese Journal of Applied Physics, 2002, 41: L246-L248

    [4] Damilano B, Grandjean N, Pernot C, Massies J. Monolithic white light emitting diodes based on InGaN/GaN multiple-quantum wells. Japanese Journal of Applied Physics, 2001, 40: L918-L920

    [5] Xiao D, Kim K W, Bedair S M, Zavada J M. Design of white lightemitting diodes using InGaN/AlInGaN quantum-well structures. Applied Physics Letters, 2004, 84(5): 672-674

    [6] Ho I-H, Stringfellow G B. Solid phase immiscibility in GaInN. Applied Physics Letters, 1996, 69(18): 2701-2703

    [7] Huang C-F, Tang T-Y, Huang J-J, Shiao W-Y, Yang C C, Hsu C-W, Chen L C. Prestrained effect on the emission properties of InGaN/GaN quantum-well structures. Applied Physics Letters, 2006, 89(5): 051913

    [8] Li S F, Schrmann J, Pawlis A, As D J, Lischka K. Cubic InGaN/GaN multi-quantum wells and AlGaN/GaN distributed Bragg reflectors for application in resonant cavity LEDs. Microelectronics Journal, 2005, 36(11): 963-968

    [9] Kuo Y-K, Chang Y-A. Effects of electronic current overflow and inhomogeneous carrier distribution on InGaN quantum-well laser performance. IEEE Journal of Quantum Electronics, 2004, 40(5): 437-444

    Feng WEN, Lirong HUANG, Liangzhu TONG, Dexiu HUANG, Deming LIU. Luminescence properties of blue and green dual wavelength InGaN/GaN multi-quantum well light-emitting diode[J]. Frontiers of Optoelectronics, 2009, 2(4): 446
    Download Citation