• Optoelectronics Letters
  • Vol. 10, Issue 6, 423 (2014)
Zuo-han LI1、2, Ji-ying PENG1、2、*, Yi ZHENG1、2, Ye YANG1、2, and Jin-hua KOU1、2
Author Affiliations
  • 1Institute of Laser, School of Science, Beijing Jiaotong University, Beijing 100044, China
  • 2Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
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    DOI: 10.1007/s11801-014-4155-y Cite this Article
    LI Zuo-han, PENG Ji-ying, ZHENG Yi, YANG Ye, KOU Jin-hua. C-cut Nd-doped vanadate crystal self-Raman laser with narrow Q-switched envelope and high mode-locked repetition rate[J]. Optoelectronics Letters, 2014, 10(6): 423 Copy Citation Text show less
    References

    [1] FAN Li, CHEN Hai-tao and ZHU Jun, Journal of Optoelectronics ·Laser 25, 419 (2014). (in Chinese)

    [2] PENG Ji-ying and ZHENG Yi, Journal of Optoelectronics ·Laser 24, 415 (2013). (in Chinese)

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    [9] W. Tian, C. Wang, G. Wang, S. Liu and J. Liu, Laser Physics Letters 4, 196 (2007).

    [10] G. Huang, Y. Q. Yu, X. H. Xie, Y. F. Zhang and C. Du, Optics Express 21, 19723 (2013).

    [11] G. Xiao and M. Bass, IEEE Journal of Quantum Electronics 33, 41 (1997).

    CLP Journals

    [1] LIN Hai-feng, XIONG Fei-bing, HUANG Jian-ping. Output characteristics of Nd:GdVO4crystals laser with dual c-axis orthogonal gains end-pumped by two fibercoupled diode lasers[J]. Optoelectronics Letters, 2015, 11(1): 30

    LI Zuo-han, PENG Ji-ying, ZHENG Yi, YANG Ye, KOU Jin-hua. C-cut Nd-doped vanadate crystal self-Raman laser with narrow Q-switched envelope and high mode-locked repetition rate[J]. Optoelectronics Letters, 2014, 10(6): 423
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