• Optoelectronics Letters
  • Vol. 10, Issue 6, 423 (2014)
Zuo-han LI1、2, Ji-ying PENG1、2、*, Yi ZHENG1、2, Ye YANG1、2, and Jin-hua KOU1、2
Author Affiliations
  • 1Institute of Laser, School of Science, Beijing Jiaotong University, Beijing 100044, China
  • 2Key Laboratory of Luminescence and Optical Information, Ministry of Education, Beijing Jiaotong University, Beijing 100044, China
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    DOI: 10.1007/s11801-014-4155-y Cite this Article
    LI Zuo-han, PENG Ji-ying, ZHENG Yi, YANG Ye, KOU Jin-hua. C-cut Nd-doped vanadate crystal self-Raman laser with narrow Q-switched envelope and high mode-locked repetition rate[J]. Optoelectronics Letters, 2014, 10(6): 423 Copy Citation Text show less

    Abstract

    In this paper, a passively Q-switched and mode-locked c-cut Nd-doped vanadate crystal self-Raman laser at 1.17 μm is firstly demonstrated by using Cr4+:YAG. Two crystals of Nd3+:YVO4and Nd3+:GdVO4are adopted to generate laser, respectively. With the incident pump power of 13 W, the average output powers of 678 mW and 852 mW at 1.17 μm are obtained with the durations of Q-switched envelope of 1.8 ns and 2 ns, respectively. The mode-locked repetition rates are as high as 2.3 Hz and 2.2 GHz, respectively. As far as we know, the Q-switched envelope is the narrowest and the mode-locked repetition rate is the highest at present in this field. In addition, yellow laser output is also achieved by using the LiB3O5frequency doubling crystal.
    LI Zuo-han, PENG Ji-ying, ZHENG Yi, YANG Ye, KOU Jin-hua. C-cut Nd-doped vanadate crystal self-Raman laser with narrow Q-switched envelope and high mode-locked repetition rate[J]. Optoelectronics Letters, 2014, 10(6): 423
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