Author Affiliations
1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China2Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China3Key Laboratory of Solid-State Optoelectronics Information Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China4Bimberg Chinese-German Center for Green Photonics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China5Institute of Solid State Physics and Center of Nanophotonics, Technische Universität Berlin, 10623 Berlin, Germanyshow less
Fig. 1. (a) Schematics of the 940 nm HCG-VCSEL. The grating period is Λ, a is the width of the grating bar, the duty cycle (DC) is defined as a/Λ, and tg is the thickness of the grating. (b) Field distribution of the resonance mode of our HCG-VCSELs.
Fig. 2. (a) Reflectivity contour of the HCG as a function of normalized thickness (tg/Λ) and normalized wavelength (λ/Λ) under normal incidence. (b) Reflectivity spectra of the HCGs for different bar widths for a grating period of 648 nm and a thickness of about a half wavelength.
Fig. 3. Field distribution of the fundamental mode of the designed HCG-VCSEL with an oxide aperture of 4 μm in diameter. The resonant wavelength is 941.6 nm.
Fig. 4. Fabrication process flow of the HCG-VCSEL.
Fig. 5. (a) Infrared microscope image of the mesa after oxidation. The dashed ellipse indicates the profile of the oxidation edge. The size of the oxide aperture is about 4 μm×8 μm. (b) SEM image of a typical air-suspended HCG with two posts of the HCG-VCSEL.
Fig. 6. (a) L-I-V curves of an HCG-VCSEL. (b) Lasing spot image from the CCD of the HCG-VCSEL at 2 mA. (c) L-I-V curves of the device without an HCG. (d) Image from the CCD of the devices without HCGs at 6 mA.
Fig. 7. (a) Spectra of the HCG-VCSEL under CW operation. (b) Spectra of the device without an HCG at different currents.
Fig. 8. Effective mode lengths of the HCG-VCSELs with different pair numbers of the p-DBR. The TM HCG has a grating period of 380 nm and a bar width of 230 nm. The thickness of the HCG is about a half wavelength.
Fig. 9. Calculated small-signal modulation responses of the TM HCG-VCSEL with a λ/2-cavity and an air thickness of one-quarter wavelength beneath the HCG at different currents.
Parameter | Value |
---|
Confinement factor | 0.065 | Cavity length (μm)a | 0.754 | Injection efficiency | 0.8 | Material gain coefficient () | 1800 | Nonlinear gain coefficient () | | Carrier density reduction () | | Carrier density at transparency () | |
|
Table 1. Simulation Parameters for the TM HCG-VCSEL [
37]