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    Journals >Acta Photonica Sinica >Volume 31 >Issue 4 >Page 445 > Article
    • Acta Photonica Sinica
    • Vol. 31, Issue 4, 445 (2002)
    THE EFFECT OF NEGATIVE DIFFERENTIAL MOBILITY AND IMPACT IONIZATION ON NONLINEARITY OF GaAs PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH
    1, 1, 2, 1, and 1
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. THE EFFECT OF NEGATIVE DIFFERENTIAL MOBILITY AND IMPACT IONIZATION ON NONLINEARITY OF GaAs PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH[J]. Acta Photonica Sinica, 2002, 31(4): 445 Copy Citation Text show less

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. THE EFFECT OF NEGATIVE DIFFERENTIAL MOBILITY AND IMPACT IONIZATION ON NONLINEARITY OF GaAs PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH[J]. Acta Photonica Sinica, 2002, 31(4): 445
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