[1] LETTINGTON A H,WORT C J H,MONACHAN B C.Development and IR applications of GeC thin films[C].SPIE,1989,1112:156-161.
[2] MACKOWSKI J M,CIMMA B,PIGNARD R.Rain erosion behavior of germanium carbide films grown on Ge Substrates[C].SPIE,1992,1760:201-209.
[4] OKINAKA M,HAMANA Y,TOKUDA T,et al.Effect of lower growth temperature on C incorporation in GeC epilayers on Si(0 0 1) grown by MBE[J].Physica E,2003,16:473-475.
[5] BIEDERMAN H,STUNDZIA V,SLAVINSKA D,et al.Composite germanium/C:H films prepared by DC unbalanced magnetron sputtering[J].Thin Solid Films,1999,351(1-2):151-157.
[6] SZMIDT J,GAZICKI-LIPMAN M,SZYMANOWSKI H,et al.Electrophysical properties of thin germanium carbon layers produced on silicon using organometallic radio frequency plasma enhanced chemical vapor deposition process[J].Thin Solid Films,2003,441 (1-2):192-199.
[8] KAUFMAN H R,HARPER J M E.Ion-assist applications of broad-beam ion source[C].SPIE,2004,5527:50-68.
[9] HU C Q,ZHENG W T,ZHENG B,et al.Chemical bonding of a-Ge1-xCx:H films grown by RF reactive sputtering[J].Vacuum,2004,77(1):63-68.
[10] MACLEOD H A.Thin film optical filters[M].2nd ed.U.K.,Bristol:Adam Hilger Ltd,1986:35.