[1] NOVOSELOV K S, GEIM A K, MOROZOV S V, et al. Electric field effect in atomically thin carbon films[J]. Science, 306, 666-669(2004).

[2] BOLOTIN K I, SIKES K J, JIANG Z, et al. Ultrahigh electron mobility in suspended graphene[J]. Solid State Communications, 146, 351-355(2008).

[3] NAIR R R, BLAKE P, GRIGORENKO A N, et al. Fine structure constant defines visual transparency of graphene[J]. Science, 320, 1308(2008).

[4] SCHWIERZ F. Graphene transistors[J]. Nature Nanotechnology, 5, 487-496(2010).

[5] WU Y Q, JENKINS K A, VALDES-GARCIA A, et al. State-of-the-art graphene high-frequency electronics[J]. Nano Letters, 12, 3062-3067(2012).

[6] SHAO Y Y, WANG J, WU H, et al. Graphene based electrochemical sensors and biosensors: a review[J]. Electroanalysis, 22, 1027-1036(2010).

[7] KIM S M, SONG E B, LEE S, et al. Transparent and flexible graphene charge-trap memory[J]. ACS Nano, 6, 7879-7884(2012).

[8] RAGHAVAN S, STOLICHNOV I, SETTER N, et al. Long-term retention in organic ferroelectric-graphene memories[J]. Applied Physics Letters, 100, 023507(2012).

[9] LIU M, YIN X B, ZHANG X. Double-layer graphene optical modulator[J]. Nano Letters, 12, 1482-1485(2012).

[10] WANG F, ZHANG Y B, TIAN C S, et al. Gate-variable optical transitions in graphene[J]. Science, 320, 206-209(2008).

[11] STAMPFER C, SCHURTENBERGER E, MOLITOR F, et al. Tunable graphene single electron transistor[J]. Nano Letters, 8, 2378-2383(2008).

[12] VU Q A, LEE J H, NGUYEN V L, et al. Tuning carrier tunneling in van der Waals heterostructures for ultrahigh detectivity[J]. Nano Letters, 17, 453-459(2017).

[13] LI D, CHEN M Y, SUN Z Z, et al. Two-dimensional non-volatile programmable p–n junctions[J]. Nature Nanotechnology, 12, 901-906(2017).

[14] TRAN M D, KIM H, KIM J S, et al. Two-terminal multibit optical memory via van der Waals heterostructure[J]. Advanced Materials, 31, 1807075(2019).

[15] HUANG Y, SUTTER E, SHI N N, et al. Reliable exfoliation of large-area high-quality flakes of graphene and other two-dimensional materials[J]. ACS Nano, 9, 10612-10620(2015).

[16] DESAI S B, MADHVAPATHY S R, AMANI M, et al. Gold-mediated exfoliation of ultralarge optoelectronically-perfect monolayers[J]. Advanced Materials, 28, 4053-4058(2016).

[17] MEITL M A, ZHU Z T, KUMAR V, et al. Transfer printing by kinetic control of adhesion to an elastomeric stamp[J]. Nature Materials, 5, 33-38(2006).

[18] LI D, WANG X J, ZHANG Q C, et al. Nonvolatile floating-gate memories based on stacked black phosphorus-boron nitride-MoS₂ heterostructures[J]. Advanced Functional Materials, 25, 7360-7365(2015).

[20] DI BARTOLOMEO A, GIUBILEO F, SANTANDREA S, et al. Charge transfer and partial pinning at the contacts as the origin of a double dip in the transfer characteristics of graphene-based field-effect transistors[J]. Nanotechnology, 22, 275702(2011).

[21] KATSNELSON M I, NOVOSELOV K S, GEIM A K. Chiral tunnelling and the Klein paradox in graphene[J]. Nature Physics, 2, 620-625(2006).