Investigation of AlN Thin Films Prepared by Pulsed Excimer Laser Deposition

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Lasers >Volume 26 >Issue 9 >Page 815 > Article

Chinese Journal of Lasers
Vol. 26, Issue 9, 815 (1999)

Investigation of AlN Thin Films Prepared by Pulsed Excimer Laser Deposition

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, and [in Chinese]²

Author Affiliations

¹[in Chinese]

²[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Investigation of AlN Thin Films Prepared by Pulsed Excimer Laser Deposition[J]. Chinese Journal of Lasers, 1999, 26(9): 815 Copy Citation Text

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Abstract

The (101) oriented AlN thin films have been successfully grown on Si(111) substrates by pulsed excimer laser deposition combined with following annealing. XRD, SRP, FTIR and AFM are employed to characterize the AlN films. Results indicate that the AlN films have fine grains with size of 200 nm and perfect dielectric property with the spreading resistance of above 108 Ω.

Keywords

aluminum nitride dielectric property pulsed laser deposition (PLD)

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Investigation of AlN Thin Films Prepared by Pulsed Excimer Laser Deposition[J]. Chinese Journal of Lasers, 1999, 26(9): 815

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