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    Journals >Chinese Journal of Lasers >Volume 39 >Issue 1 >Page 102010 > Article
    • Chinese Journal of Lasers
    • Vol. 39, Issue 1, 102010 (2012)
    Study of the Ohmic Contact of GaSb-Based Semiconductor Laser
    Wang Yue*, Liu Guojun, Li Juncheng, An Ning, Li Zhanguo, Wang Yuxia, and Wei Zhipeng
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    DOI: 10.3788/cjl201239.0102010 Cite this Article Set citation alerts
    Wang Yue, Liu Guojun, Li Juncheng, An Ning, Li Zhanguo, Wang Yuxia, Wei Zhipeng. Study of the Ohmic Contact of GaSb-Based Semiconductor Laser[J]. Chinese Journal of Lasers, 2012, 39(1): 102010 Copy Citation Text show less
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    Wang Yue, Liu Guojun, Li Juncheng, An Ning, Li Zhanguo, Wang Yuxia, Wei Zhipeng. Study of the Ohmic Contact of GaSb-Based Semiconductor Laser[J]. Chinese Journal of Lasers, 2012, 39(1): 102010
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