• Semiconductor Optoelectronics
  • Vol. 44, Issue 3, 417 (2023)
LUO Cairen, TANG Yingwen*, and ZHAO Shibin
Author Affiliations
  • [in Chinese]
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    DOI: 10.16818/j.issn1001-5868.2023031701 Cite this Article
    LUO Cairen, TANG Yingwen, ZHAO Shibin. Analysis of the Surface Properties of Ag and p-GaP Ohm Contacts[J]. Semiconductor Optoelectronics, 2023, 44(3): 417 Copy Citation Text show less
    References

    [7] Hibbard D L, Jung S P, Wang C, et al. Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag[J]. Appl. Phys. Lett., 2003, 83(2): 311-313.

    [11] Lu Z H, Hua W M, Ding Z C. Au-Zn/Au-Sb/GaP ohmic contact of GaP LED[J]. J. of Luminescence, 1988, 40/41: 806-807.

    [13] Song J O, Kwak J S, Park Y, et al. Ohmic and degradation mechanisms of Ag contacts on p-type GaN[J]. Appl. Phys. Lett., 2005, 86(6): 062104-1-3.

    LUO Cairen, TANG Yingwen, ZHAO Shibin. Analysis of the Surface Properties of Ag and p-GaP Ohm Contacts[J]. Semiconductor Optoelectronics, 2023, 44(3): 417
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