Direct bandgap germanium-on-silicon inferred from 5.7% uniaxial tensile strain [Invited]

David S. Sukhdeo; Donguk Nam; Ju-Hyung Kang; Mark L. Brongersma; and Krishna C. Saraswat

doi:10.1364/PRJ.2.0000A8

Journals >Photonics Research >Volume 2 >Issue 3 >Page A8 > Article

Photonics Research
Vol. 2, Issue 3, A8 (2014)

Direct bandgap germanium-on-silicon inferred from 5.7% <100> uniaxial tensile strain [Invited]

David S. Sukhdeo¹, Donguk Nam^1、*, Ju-Hyung Kang², Mark L. Brongersma², and and Krishna C. Saraswat¹

Author Affiliations

¹Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA

²Department of Materials Science and Engineering, Stanford University, Stanford, California 94305, USA

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DOI: 10.1364/PRJ.2.0000A8 Cite this Article Set citation alerts

David S. Sukhdeo, Donguk Nam, Ju-Hyung Kang, Mark L. Brongersma, and Krishna C. Saraswat. Direct bandgap germanium-on-silicon inferred from 5.7% <100> uniaxial tensile strain [Invited][J]. Photonics Research, 2014, 2(3): A8 Copy Citation Text

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