Saturated absorption of different layered Bi2Se3 films in the resonance zone

Jun Zhang; Tian Jiang; Tong Zhou; Hao Ouyang; Chenxi Zhang; Zheng Xin; Zhenyu Wang; Xiang’ai Cheng

doi:10.1364/PRJ.6.0000C8

Journals >Photonics Research >Volume 6 >Issue 10 >Page C8 > Article

Photonics Research
Vol. 6, Issue 10, C8 (2018)

Saturated absorption of different layered Bi₂Se₃ films in the resonance zone

Jun Zhang^1、†, Tian Jiang^1、†,*, Tong Zhou^2、†, Hao Ouyang¹, Chenxi Zhang¹, Zheng Xin³, Zhenyu Wang^3、4, and Xiang’ai Cheng¹

Author Affiliations

¹College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha 410073, China

²State Key Laboratory of High Performance Computing, National University of Defense Technology, College of Computer, Changsha 410073, China

³National Institute of Defense Technology Innovation, Academy of Military Sciences PLA China, Beijing 100010, China

⁴e-mail: oscarwang2008@sina.com

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DOI: 10.1364/PRJ.6.0000C8 Cite this Article Set citation alerts

Jun Zhang, Tian Jiang, Tong Zhou, Hao Ouyang, Chenxi Zhang, Zheng Xin, Zhenyu Wang, Xiang’ai Cheng. Saturated absorption of different layered Bi₂Se₃ films in the resonance zone[J]. Photonics Research, 2018, 6(10): C8 Copy Citation Text

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