Fig. 1. Passivated contact solar cell structure and carrier transport mode^[13]. 钝化接触太阳电池结构及载流子输运方式^[13]

Fig. 2. energy band structure diagram.能带结构示意图

Fig. 3. Schematics of the NiO/c-Si/TiO₂ solar cell structure^[9]. NiO/c-Si/TiO₂结构太阳电池示意图^[9]

Fig. 4. (a) Schematics of the MoO_x/n-Si heterojunction solar cell structure; (b) cross section imaged by scanning electron microscopy^[16]. (a) MoO_x/c-Si异质结太阳电池结构的示意图; (b)通过扫描电子显微镜成像的横截面图^[16]

Fig. 5. Schematics of the full back contact solar cell structure^[10]. 全背接触结构的太阳电池示意图^[10]

Fig. 6. (a)BackPEDOT solar cell front; (b) schematic cross-section of the BackPEDOT solar cell^[39]. (a)BackPEDOT太阳电池正面; (b)BackPEDOT太阳电池横截面示意图^[39]

Fig. 7. The structure of MLBC solar cell^[11]. MLBC太阳电池结构^[11]

Fig. 8. Silicon heterojunction cell structure using MoO_x as hole selective contact; (a) n-a-Si:H as electron selective contact; (b) ZnO:B as electron selectivecontact^[47]. 使用MoO_x作为空穴选择性接触的硅异质结电池结构　(a)n-a-Si:H作为电子选择性接触; (b)ZnO:B作为电子选择性接触^[47]

Fig. 9. Characteristics of silicon heterojunction cells with MoO_x as hole selective contact, n+-a-Si:H and ZnO:B as electron selective contact respectively: (a) J-V curve; (b) EQE curve^[47]. 采用MoO_x作为空穴选择性接触, 分别n+-a-Si:H和ZnO:B作为电子选择性接触的硅异质结电池特性　(a)J-V曲线; (b)EQE曲线^[47]

Fig. 10. (a) The image of an as-deposited MoO_x film on c-Si; (b) the image of the MoO_x and c-Si interface; (c) cross-sectional STEM image for the region of the EDS line scan; (d) compositional distribution of each element measured using the EDS line scan showing a thinSiO_x layer formed between the MoO_x and the c-Si^[35]. (a)在c-Si上沉积MoO_x薄膜的横截面图像; (b)MoO_x和c-Si的交界处图像; (c)EDS线扫描区域的横截面STEM图像; (d)使用EDS线测量每个元素的组成分布, 显示在MoO_x和c-Si之间形成薄的SiO_x层^[35]