[1] ZHANG H, CHEN Y, ZHOU G, et al. Wetting layer evolution and its temperature dependence during self-assembly of InAs/GaAs quantum dots[J]. Nanoscale Research Letters, 2012, 7(1):1-6.
[2] MAZUR Y I, LOPES-OLIVEIRA V, SOUZA L D, et al. Carrier transfer in vertically stacked quantum ring-quantum dot chains[J].Journal of Applied Physics,2015,117(15):154307.
[3] JI H M, LIANG B , LIANG P J, et al. Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence[J].Applied Physics Letters, 2015, 106(10):130104.
[4] PERSANO A, COLA A, TAURINO A, et al. Electronic structure of double stacked InAs/GaAs quantum dots: Experiment and theory[J]. Journal of Applied Physics, 2007,102(9):094314-094314-8.
[5] LIU Y, LIANG B L, GUO Q L, et al. Electronic coupling in nanoscale InAs/GaAs quantum dot pairs separated by a thin Ga(Al)As spacer[J]. Nanoscale Research Letters, 2015, 10(1):271.
[6] TARASOV G G, ZHUCHENKO Z Y, LISITSA M P, et al. Optical detection of asymmetric quantum-dot molecules in double-layer InAs/GaAs structures[J]. Semiconductors, 2006, 40(1):79-83.
[7] CHAKRABARTI S, HALDER N, SENGUPTA S, et al. Vertical ordering and electronic coupling in bilayer nanoscale InAs/GaAs quantum dots separated by a thin spacer layer[J].Nanotechnology, 2008, 19(50):505704.
[8] LIU Y, WANG Y, LIANG B L, et al. Interplay effect of excitation and temperature on carrier transfer between vertically aligned InAs/GaAs quantum dot pairs[J].Crystals, 2016, 6(11):144.
[9] TIAN Peng,HUANG Li-rong, FEI Shu-ping, et al . Effect of different cap layers on the structure and optical properties of InAs/GaAs self-assembled quantum dot[J].Acta Physica Sinica,2010,59(8):5738-5742.
[10] CHUN C, LIN S D, PAN C H, et al. Observation of long-lived excitons in InAs quantum dots under thermal redistribution temperature[J]. Physics Letters A ,2012,376(17):1495–1498.
[11] LIU Yu-min, YU Zhong-yuan, REN Xiao-min. Effects of the thickness of spacing layer and capping layer on the strain distribution and wavelength emission of InAs/GaAs quantum dot[J]. Acta Physica Sinica,2008, 58(1):66-72.
[12] TUTU F K, SELLERS I R, PEINADO M G, et al. Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer[J]. Journal of Applied Physics, 2012, 111(4):5014-166.
[13] WEI Quan-xiang, WU Bing-peng, REN Zheng-wei, et al. Photoluminescence study of two layer stacked InAs/GaAs quantum dots[J]. Acta Optica Sinica, 2012, 32(1):0125001.
[14] MAZUR Y I, WANG X, WANG Z M, et al.Photoluminescence study of carrier transfer among vertically aligned double-stacked InAs/GaAs quantum dot layers[J]. Applied Physics Letters, 2002, 81(13):2469-2471.
[15] ZHOU X L, CHEN Y H, JIA C H, et al. Interplay effects of temperature and injection power on photoluminescence of InAs/GaAs quantum dot with high and low areal density[J]. Journal of Physics D:Applied Physics, 2010, 43(48):485102-485107.
[16] MAZUR Y I, WANG Z M, TARASOV G G, et al. Interdot carrier transfer in asymmetric bilayer InAs/GaAs quantum dot structures[J].Applied Physics Letters , 2005, 86(6):063102.